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Transistors / Power Field-Effect Transistors / IRF6717MTRPBF
Datasheets
IRF6717MTRPBF by:

Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for IRF6717MTRPBF by Infineon Technologies AG

Results Overview of IRF6717MTRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IRF6717MTRPBF Information

IRF6717MTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF6717MTRPBF

Part # Distributor Description Stock Price Buy
DISTI # 34AC1776
Newark Mosfet, N-Ch, 25V, 38A, 150Deg C, 96W, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Infineon IRF6717MTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 54
  • 1 $2.9300
  • 10 $2.4000
  • 25 $2.3000
  • 50 $2.0500
  • 100 $1.7900
  • 250 $1.6200
  • 500 $1.4600
$1.4600 / $2.9300 Buy Now
DISTI # 86AK5365
Newark Mosfet, N-Ch, 25V, 38A, Directfet Mx Rohs Compliant: Yes |Infineon IRF6717MTRPBF RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,800 $1.2800
$1.2800 Buy Now
DISTI # 34AC1776
Avnet Americas Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R - Product that comes on tape, but is not reeled (Alt: 34AC1776) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Ammo Pack 54 Partner Stock
  • 1 $2.9300
  • 10 $2.4000
  • 25 $2.3000
  • 50 $2.0500
  • 100 $1.7900
$1.7900 / $2.9300 Buy Now
DISTI # IRF6717MTRPBF
Avnet Americas Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF6717MTRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks, 0 Days Container: Reel 0
RFQ
Rochester Electronics IRF6717 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 115
  • 1 $1.3600
  • 25 $1.3300
  • 100 $1.2800
  • 500 $1.2200
  • 1,000 $1.1600
$1.1600 / $1.3600 Buy Now
DISTI # SMC-IRF6717MTRPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1386
RFQ
DISTI # C1S322000482595
Chip1Stop Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 33
  • 1 $0.6540
$0.6540 Buy Now
DISTI # SP001525458
EBV Elektronik Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R (Alt: SP001525458) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 25V 38A 0.95m10V38A 2.8W 1.35V150uA 1 N-channel MG-WDSON-5 MOSFETs ROHS 22
  • 1 $2.2427
  • 10 $2.1909
  • 30 $2.1547
  • 100 $2.1202
$2.1202 / $2.2427 Buy Now

Part Details for IRF6717MTRPBF

IRF6717MTRPBF CAD Models

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IRF6717MTRPBF Part Data Attributes

Parametric Data
IRF6717MTRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF6717MTRPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.00125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6717MTRPBF

This table gives cross-reference parts and alternative options found for IRF6717MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6717MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF6717MPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 IRF6717MTRPBF vs IRF6717MPBF
Part Number Manufacturer Composite Price Description Compare
IRF6717MPBF International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 IRF6717MTRPBF vs IRF6717MPBF
IRF6717MTR1PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 IRF6717MTRPBF vs IRF6717MTR1PBF

IRF6717MTRPBF Related Parts

IRF6717MTRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF6717MTRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF6717MTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF6717MTRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.

  • The maximum allowable power dissipation for the IRF6717MTRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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