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Transistors / Power Field-Effect Transistors / IRF7103TRPBF
Datasheets
IRF7103TRPBF by:

Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,

Part Details for IRF7103TRPBF by Infineon Technologies AG

Results Overview of IRF7103TRPBF by Infineon Technologies AG

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IRF7103TRPBF Information

IRF7103TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7103TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 83AK6934
Newark Mosfet, N-Ch, 50V, 3A, Soic Rohs Compliant: Yes |Infineon IRF7103TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 16000
  • 4,000 $0.2910
  • 8,000 $0.2840
$0.2840 / $0.2910 Buy Now
DISTI # 19K8221
Newark Dual N Channel Mosfet, 50V, 3A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:50V, Drain Source Voltage Vds P Channel:50V, Continuous Drain Current Id N Channel:3A, Continuous Drain Current Id P Channel:3A Rohs Compliant: Yes |Infineon IRF7103TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1819
  • 1 $0.8220
  • 10 $0.6180
  • 25 $0.5530
  • 50 $0.4900
  • 100 $0.4250
  • 250 $0.3830
  • 500 $0.3390
$0.3390 / $0.8220 Buy Now
DISTI # IRF7103TRPBF
Avnet Americas Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7103TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Reel 176000
RFQ
DISTI # IRF7103TRPBF
Avnet Americas Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7103TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel 0
RFQ
DISTI # 19K8221
Avnet Americas Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 19K8221) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 0
  • 1 $0.7280
  • 10 $0.7140
  • 25 $0.6530
  • 50 $0.5930
  • 100 $0.5310
$0.5310 / $0.7280 Buy Now
DISTI # 70017405
RS IRF7103TRPBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk 0
  • 20 $0.5500
$0.5500 RFQ
Rochester Electronics IRF7103 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 Call for Availability
  • 1 $0.2667
  • 25 $0.2614
  • 100 $0.2507
  • 500 $0.2400
  • 1,000 $0.2267
$0.2267 / $0.2667 Buy Now
DISTI # IRF7103TRPBF
TME Transistor: N-MOSFET x2, unipolar, 50V, 3A, 2W, SO8 Min Qty: 1 894
  • 1 $0.7880
  • 10 $0.5290
  • 50 $0.4560
  • 100 $0.3640
  • 250 $0.3360
  • 500 $0.2890
  • 1,000 $0.2650
  • 2,000 $0.2440
  • 4,000 $0.2310
  • 8,000 $0.2190
$0.2190 / $0.7880 Buy Now
Ameya Holding Limited Dual N-Channel 50V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8 1530
RFQ
Chip 1 Exchange INSTOCK 800
RFQ
DISTI # C1S322000482896
Chip1Stop Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 40138
  • 5 $1.1200
  • 50 $0.7120
  • 100 $0.4690
  • 200 $0.4680
  • 500 $0.3670
  • 1,000 $0.3330
  • 4,000 $0.2710
  • 8,000 $0.2650
  • 16,000 $0.2590
  • 32,000 $0.2530
$0.2530 / $1.1200 Buy Now
CHIPMALL.COM LIMITED 50V 3A 2W 0.13@10V,3.0A 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS 675
  • 1 $0.1789
  • 10 $0.1722
  • 100 $0.1562
  • 500 $0.1482
$0.1482 / $0.1789 Buy Now
DISTI # SP001562004
EBV Elektronik Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R (Alt: SP001562004) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 9 Weeks, 0 Days EBV - 0
Buy Now
LCSC 50V 3A 2W 0.1310V3.0A 1V250uA 2 N-Channel SOIC-8 MOSFETs ROHS 2550
  • 5 $0.3057
  • 50 $0.2471
  • 150 $0.2220
  • 500 $0.1703
  • 2,500 $0.1563
  • 4,000 $0.1480
$0.1480 / $0.3057 Buy Now
Win Source Electronics MOSFET 2N-CH 50V 3A 8-SOIC 91490
  • 230 $0.2214
  • 485 $0.2072
  • 750 $0.2000
  • 1,080 $0.1857
  • 1,400 $0.1786
  • 1,750 $0.1715
$0.1715 / $0.2214 Buy Now

Part Details for IRF7103TRPBF

IRF7103TRPBF CAD Models

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IRF7103TRPBF Part Data Attributes

Parametric Data
IRF7103TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7103TRPBF Infineon Technologies AG Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

IRF7103TRPBF Related Parts

IRF7103TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7103TRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF7103TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF7103TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.

  • The maximum allowable power dissipation for the IRF7103TRPBF is 150W, but this can be affected by factors such as ambient temperature, thermal resistance, and heat sinking.

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