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Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7103TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83AK6934
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Newark | Mosfet, N-Ch, 50V, 3A, Soic Rohs Compliant: Yes |Infineon IRF7103TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 16000 |
|
$0.3180 / $0.3250 | Buy Now |
DISTI #
19K8221
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Newark | Dual N Channel Mosfet, 50V, 3A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:50V, Drain Source Voltage Vds P Channel:50V, Continuous Drain Current Id N Channel:3A, Continuous Drain Current Id P Channel:3A Rohs Compliant: Yes |Infineon IRF7103TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1819 |
|
$0.3390 / $0.8220 | Buy Now |
DISTI #
IRF7103TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7103TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Reel | 172000 |
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RFQ | |
DISTI #
19K8221
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Avnet Americas | Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 19K8221) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 0 |
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$0.4250 / $0.8220 | Buy Now |
DISTI #
70017405
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RS | IRF7103TRPBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.4520 / $0.5320 | RFQ |
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Rochester Electronics | IRF7103 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 48000 |
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$0.2222 / $0.2614 | Buy Now |
DISTI #
IRF7103TRPBF
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TME | Transistor: N-MOSFET x2, unipolar, 50V, 3A, 2W, SO8 Min Qty: 1 | 868 |
|
$0.2120 / $0.7650 | Buy Now |
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Ameya Holding Limited | Dual N-Channel 50V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8 | 1530 |
|
RFQ | |
|
Chip 1 Exchange | INSTOCK | 800 |
|
RFQ | |
DISTI #
C1S322000482896
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Chip One Stop | Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 40138 |
|
$0.2000 / $0.7120 | Buy Now |
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IRF7103TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7103TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7103TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7103TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF7103IPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN | IRF7103TRPBF vs IRF7103IPBF |
IRF7103 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7103TRPBF vs IRF7103 |
IRF7103PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7103TRPBF vs IRF7103PBF |