Part Details for IRF710B by Fairchild Semiconductor Corporation
Overview of IRF710B by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF710B
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-IRF710B-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 1665 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
31593 In Stock |
|
$0.1800 | Buy Now |
|
Bristol Electronics | 7100 |
|
RFQ | ||
|
Rochester Electronics | IRF710B - 2A, 400V, 3.4ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 31593 |
|
$0.1547 / $0.1820 | Buy Now |
|
Chip1Cloud | 400V N-Channel MOSFET | 2580 |
|
RFQ |
Part Details for IRF710B
IRF710B CAD Models
IRF710B Part Data Attributes:
|
IRF710B
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
IRF710B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 3.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 36 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF710B
This table gives cross-reference parts and alternative options found for IRF710B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF710B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRF710B vs SPP80N03S2L-05 |
NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF710B vs NDP7050L |
SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRF710B vs SSH60N08 |
FQP6N50 | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF710B vs FQP6N50 |
STW13NK80Z | 12A, 800V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | IRF710B vs STW13NK80Z |
STB24NM65N | N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET | STMicroelectronics | IRF710B vs STB24NM65N |
NDB705BE | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | IRF710B vs NDB705BE |
SSH70N10 | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRF710B vs SSH70N10 |
NDB706AL | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | IRF710B vs NDB706AL |
STB80NF55L-08T4 | 80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | IRF710B vs STB80NF55L-08T4 |