Part Details for IRF720 by Vishay Siliconix
Overview of IRF720 by Vishay Siliconix
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF720
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 250 |
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RFQ | ||
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 1 |
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$0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 16 |
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$0.6160 / $0.7700 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 200 |
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$0.6250 / $1.2500 | Buy Now |
Part Details for IRF720
IRF720 CAD Models
IRF720 Part Data Attributes:
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IRF720
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF720
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SILICONIX INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 3.3 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF720
This table gives cross-reference parts and alternative options found for IRF720. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF720, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF720-006 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF720 vs IRF720-006 |
MTP4N40E | 4A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | Rochester Electronics LLC | IRF720 vs MTP4N40E |
IRF723 | 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF720 vs IRF723 |
IRF723 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF720 vs IRF723 |
IRF720PBF | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF720 vs IRF720PBF |
RFP4N40 | 4A, 400V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF720 vs RFP4N40 |
IRF720 | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF720 vs IRF720 |
IRF720 | 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF720 vs IRF720 |
BUZ76 | 3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF720 vs BUZ76 |
IRF720-010 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF720 vs IRF720-010 |