Datasheets
IRF720 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRF720 by Vishay Siliconix

Overview of IRF720 by Vishay Siliconix

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF720

Part # Distributor Description Stock Price Buy
Bristol Electronics   250
RFQ
Bristol Electronics   20
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220VAR 1
  • 1 $0.7500
$0.7500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220VAR 16
  • 1 $0.7700
  • 7 $0.6160
$0.6160 / $0.7700 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220VAR 200
  • 1 $1.2500
  • 21 $0.7500
  • 81 $0.6250
$0.6250 / $1.2500 Buy Now

Part Details for IRF720

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IRF720 Part Data Attributes:

IRF720 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRF720 Vishay Siliconix Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SILICONIX INC
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE
Drain Current-Max (ID) 3.3 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF720

This table gives cross-reference parts and alternative options found for IRF720. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF720, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF720-006 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF720 vs IRF720-006
MTP4N40E 4A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC IRF720 vs MTP4N40E
IRF723 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF720 vs IRF723
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF720 vs IRF723
IRF720PBF Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF720 vs IRF720PBF
RFP4N40 4A, 400V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF720 vs RFP4N40
IRF720 Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF720 vs IRF720
IRF720 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF720 vs IRF720
BUZ76 3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF720 vs BUZ76
IRF720-010 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF720 vs IRF720-010
Part Number Description Manufacturer Compare
BUZ76 Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF720 vs BUZ76
IRF722 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF720 vs IRF722
IRF723-010 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF720 vs IRF723-010
RFP4N40 Power Field-Effect Transistor, 4A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF720 vs RFP4N40
BUZ76 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRF720 vs BUZ76
MTP2N40 2A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF720 vs MTP2N40
IRF720-006 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF720 vs IRF720-006
IRF722-010 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF720 vs IRF722-010
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF720 vs IRF723
IRF720 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF720 vs IRF720

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