Part Details for IRF7201 by International Rectifier
Overview of IRF7201 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7201
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 15 |
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RFQ | ||
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Bristol Electronics | 4891 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 5008 |
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$0.2640 / $0.7200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 44 |
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$0.5353 / $1.0705 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 286 |
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$0.6000 / $1.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 100 |
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$0.6000 / $1.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 80 |
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$1.3776 / $2.5048 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 267 |
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$0.6000 / $1.2000 | Buy Now |
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Velocity Electronics | Our Stock | 181 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 162 |
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$0.7500 / $1.1500 | Buy Now |
Part Details for IRF7201
IRF7201 CAD Models
IRF7201 Part Data Attributes
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IRF7201
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7201
International Rectifier
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 2.5 W | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 58 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7201
This table gives cross-reference parts and alternative options found for IRF7201. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7201, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7201TR | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | International Rectifier | IRF7201 vs IRF7201TR |
IRF7201TRPBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7201 vs IRF7201TRPBF |
MMSF6N01HD | 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | Motorola Mobility LLC | IRF7201 vs MMSF6N01HD |
NDS9410 | TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | National Semiconductor Corporation | IRF7201 vs NDS9410 |
NDS9410 | 7A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET | Texas Instruments | IRF7201 vs NDS9410 |
IRF7201TRPBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | International Rectifier | IRF7201 vs IRF7201TRPBF |
IRF7201PBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7201 vs IRF7201PBF |