Datasheets
IRF7201PBF by:

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7201PBF by International Rectifier

Overview of IRF7201PBF by International Rectifier

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Price & Stock for IRF7201PBF

Part # Distributor Description Stock Price Buy
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant Europe - 50
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Part Details for IRF7201PBF

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IRF7201PBF Part Data Attributes

IRF7201PBF International Rectifier
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IRF7201PBF International Rectifier Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.3 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 58 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7201PBF

This table gives cross-reference parts and alternative options found for IRF7201PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7201PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS9410 TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power National Semiconductor Corporation IRF7201PBF vs NDS9410
IRF7201 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7201PBF vs IRF7201
IRF7201TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7201PBF vs IRF7201TRPBF
MMSF6N01HD 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC IRF7201PBF vs MMSF6N01HD
IRF7201TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7201PBF vs IRF7201TR
IRF7201TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7201PBF vs IRF7201TR
Part Number Description Manufacturer Compare
AP2302GN-HF TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp IRF7201PBF vs AP2302GN-HF
AP2304AGN TRANSISTOR 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp IRF7201PBF vs AP2304AGN
IRF7201 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7201PBF vs IRF7201
DMG3402L-13 Power Field-Effect Transistor Diodes Incorporated IRF7201PBF vs DMG3402L-13
AP2306AGN TRANSISTOR 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp IRF7201PBF vs AP2306AGN
IRF7201TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7201PBF vs IRF7201TR
IRF7201TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7201PBF vs IRF7201TR
DMN3052LSS-13 Power Field-Effect Transistor, 7.1A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Diodes Incorporated IRF7201PBF vs DMN3052LSS-13
MMSF6N01HD 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC IRF7201PBF vs MMSF6N01HD
IRF7201TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7201PBF vs IRF7201TRPBF

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