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Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31K2188
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:7.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V, Power Dissipation:2.5W Rohs Compliant: Yes |Infineon IRF7201TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3420 | Buy Now |
DISTI #
40M7938
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Newark | N Channel Mosfet, 30V, 7A, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:1V, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7201TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2900 / $0.7860 | Buy Now |
DISTI #
IRF7201TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7201TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 3750 |
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RFQ | |
DISTI #
70017410
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RS | MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 0.03Ohm, ID 7.3A, SO-8,PD 2.5W, VGS +/-20V,-55C | Infineon IRF7201TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.3530 / $0.4150 | RFQ |
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Future Electronics | Single N-Channel 30V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
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$0.2700 / $0.2800 | Buy Now |
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Future Electronics | Single N-Channel 30V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.2700 / $0.2800 | Buy Now |
DISTI #
69266346
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Verical | Trans MOSFET N-CH Si 30V 7.3A 8-Pin SOIC T/R Min Qty: 79 Package Multiple: 1 Date Code: 2250 | Americas - 81 |
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$0.3988 | Buy Now |
DISTI #
IRF7201TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7201TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 3750 |
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RFQ | |
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Ameya Holding Limited | Single N-Channel 30V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8 | 2953 |
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RFQ | |
DISTI #
IRF7201TRPBF
|
Avnet Americas | Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7201TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 3750 |
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RFQ |
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IRF7201TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7201TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 58 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7201TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7201TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7201TR | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | International Rectifier | IRF7201TRPBF vs IRF7201TR |
MMSF6N01HD | 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 | Motorola Mobility LLC | IRF7201TRPBF vs MMSF6N01HD |
NDS9410 | TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | National Semiconductor Corporation | IRF7201TRPBF vs NDS9410 |
NDS9410 | 7A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET | Texas Instruments | IRF7201TRPBF vs NDS9410 |
IRF7201 | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7201TRPBF vs IRF7201 |
IRF7201TRPBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | International Rectifier | IRF7201TRPBF vs IRF7201TRPBF |
IRF7201PBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7201TRPBF vs IRF7201PBF |