Datasheets
IRF7201TRPBF by:

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Details for IRF7201TRPBF by International Rectifier

Overview of IRF7201TRPBF by International Rectifier

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Price & Stock for IRF7201TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   15
RFQ
Bristol Electronics   5292
RFQ
Rochester Electronics IRF7201 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 21459
  • 1 $0.3261
  • 25 $0.3196
  • 100 $0.3065
  • 500 $0.2935
  • 1,000 $0.2772
$0.2772 / $0.3261 Buy Now

Part Details for IRF7201TRPBF

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IRF7201TRPBF Part Data Attributes

IRF7201TRPBF International Rectifier
Buy Now Datasheet
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IRF7201TRPBF International Rectifier Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.3 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.5 W
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 58 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7201TRPBF

This table gives cross-reference parts and alternative options found for IRF7201TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7201TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7201TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7201TRPBF vs IRF7201TR
IRF7201TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7201TRPBF vs IRF7201TRPBF
MMSF6N01HD 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC IRF7201TRPBF vs MMSF6N01HD
NDS9410 TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power National Semiconductor Corporation IRF7201TRPBF vs NDS9410
NDS9410 7A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET Texas Instruments IRF7201TRPBF vs NDS9410
IRF7201 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7201TRPBF vs IRF7201
IRF7201PBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7201TRPBF vs IRF7201PBF
Part Number Description Manufacturer Compare
MMSF6N01HD 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC IRF7201TRPBF vs MMSF6N01HD
IRF7201PBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7201TRPBF vs IRF7201PBF
FDS9412A Power Field-Effect Transistor, 8A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Fairchild Semiconductor Corporation IRF7201TRPBF vs FDS9412A
IRF7201 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7201TRPBF vs IRF7201
DMN3025LSS-13 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Diodes Incorporated IRF7201TRPBF vs DMN3025LSS-13
IRF7201TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7201TRPBF vs IRF7201TR
AP2302GN-HF TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp IRF7201TRPBF vs AP2302GN-HF
IRF7201TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7201TRPBF vs IRF7201TRPBF
DMG3402L-13 Power Field-Effect Transistor Diodes Incorporated IRF7201TRPBF vs DMG3402L-13
AP2302GN TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp IRF7201TRPBF vs AP2302GN

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