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Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8227
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Newark | P Channel Mosfet, -30V, 4.6A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IRF7205PBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IRF7205PBF-ND
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DigiKey | MOSFET P-CH 30V 4.6A 8SO Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
DISTI #
70017471
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RS | MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.07Ohm, ID -4.6A, SO-8,PD 2.5W, VGS +/-20V | Infineon IRF7205PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.4220 / $0.5280 | RFQ |
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Quest Components | MOSFET Transistor, P-Channel, SO | 56 |
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$0.4550 / $0.9100 | Buy Now |
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Chip 1 Exchange | INSTOCK | 566 |
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RFQ | |
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Chip1Cloud | MOSFET P-CH 30V 4.6A 8-SOIC | 21000 |
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RFQ | |
DISTI #
9103368
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element14 Asia-Pacific | MOSFET, P, LOGIC, SO-8 RoHS: Compliant Min Qty: 5 Container: Each | 0 |
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$0.2212 / $0.4907 | Buy Now |
DISTI #
9103368
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Farnell | MOSFET, P, LOGIC, SO-8 RoHS: Compliant Min Qty: 5 Lead time: 18 Weeks, 1 Days Container: Each | 0 |
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$0.3146 / $0.6992 | Buy Now |
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Perfect Parts Corporation | 54902 |
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RFQ |
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IRF7205PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7205PBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7205PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7205PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7205TRPBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7205PBF vs IRF7205TRPBF |
IRF7205TRPBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7205PBF vs IRF7205TRPBF |
IRF7205 | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7205PBF vs IRF7205 |
IRF7205PBF | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7205PBF vs IRF7205PBF |