Datasheets
IRF7205TR by:

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for IRF7205TR by International Rectifier

Overview of IRF7205TR by International Rectifier

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Applications Industrial Automation Motor control systems

Price & Stock for IRF7205TR

Part # Distributor Description Stock Price Buy
Bristol Electronics   14998
RFQ
Bristol Electronics   773
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 39774
  • 1 $0.9000
  • 2,134 $0.3300
  • 4,546 $0.3150
$0.3150 / $0.9000 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 59
  • 1 $0.6275
  • 9 $0.5020
  • 41 $0.3765
$0.3765 / $0.6275 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 2580
  • 1 $1.5000
  • 268 $0.6000
  • 1,334 $0.5250
$0.5250 / $1.5000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Europe - 3385
RFQ
Chip1Cloud   15800
RFQ

Part Details for IRF7205TR

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IRF7205TR Part Data Attributes

IRF7205TR International Rectifier
Buy Now Datasheet
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IRF7205TR International Rectifier Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.6 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2.5 W
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7205TR

This table gives cross-reference parts and alternative options found for IRF7205TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7205TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7205TRPBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7205TR vs IRF7205TRPBF
IRF7205TRPBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7205TR vs IRF7205TRPBF
IRF7205 Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7205TR vs IRF7205
IRF7205PBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7205TR vs IRF7205PBF
IRF7205PBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7205TR vs IRF7205PBF
Part Number Description Manufacturer Compare
IRF7205PBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7205TR vs IRF7205PBF
2SJ421 Power Field-Effect Transistor, 5A I(D), 30V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd IRF7205TR vs 2SJ421
NDS9435 Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET National Semiconductor Corporation IRF7205TR vs NDS9435
HAT1020R 5A, 30V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation IRF7205TR vs HAT1020R
F5H3P Power Field-Effect Transistor, 4.5A I(D), 30V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd IRF7205TR vs F5H3P
IRF7205TRPBF Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7205TR vs IRF7205TRPBF
IRF7205TRPBF-1 Power Field-Effect Transistor Infineon Technologies AG IRF7205TR vs IRF7205TRPBF-1
IRF7205 Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7205TR vs IRF7205
IRF7205PBF-1 Power Field-Effect Transistor, Infineon Technologies AG IRF7205TR vs IRF7205PBF-1
MMSF3P03HDR2 4.6A, 30V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 onsemi IRF7205TR vs MMSF3P03HDR2

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