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Part Details for IRF7301TRPBF by Infineon Technologies AG
Overview of IRF7301TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7301TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42Y0399
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Newark | Dual Mosfet, Dual N Channel, 5.2 A, 20 V, 0.05 Ohm, 4.5 V, 700 Mv Rohs Compliant: Yes |Infineon IRF7301TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
70017425
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RS | IRF7301TRPBF Dual N-channel MOSFET Transistor, 5.2 A, 20 V, 8-Pin SOIC | Infineon IRF7301TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.3830 / $0.4780 | RFQ |
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NexGen Digital | 1 |
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RFQ | ||
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DISTI #
2468002
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element14 Asia-Pacific | MOSFET, N CH, 20V, 5.2A, SOIC-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.3465 / $0.7416 | Buy Now |
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DISTI #
2468002RL
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element14 Asia-Pacific | MOSFET, N CH, 20V, 5.2A, SOIC-8 RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.3465 / $0.5000 | Buy Now |
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DISTI #
2468002
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Farnell | MOSFET, N CH, 20V, 5.2A, SOIC-8 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.6315 / $1.0913 | Buy Now |
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DISTI #
2468002RL
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Farnell | MOSFET, N CH, 20V, 5.2A, SOIC-8 RoHS: Compliant Min Qty: 100 Lead time: 40 Weeks, 1 Days Container: Reel | 0 |
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$0.6315 / $0.7580 | Buy Now |
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Sense Electronic Company Limited | SOP-8 | 6925 |
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RFQ |
Part Details for IRF7301TRPBF
IRF7301TRPBF CAD Models
IRF7301TRPBF Part Data Attributes
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IRF7301TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7301TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7301TRPBF
This table gives cross-reference parts and alternative options found for IRF7301TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7301TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7301TR | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | IRF7301TRPBF vs IRF7301TR |
| IRF7301PBF | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7301TRPBF vs IRF7301PBF |
| IRF7301TRPBF-EL | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7301TRPBF vs IRF7301TRPBF-EL |
| IRF7301 | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | IRF7301TRPBF vs IRF7301 |
| IRF7301TR | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | International Rectifier | IRF7301TRPBF vs IRF7301TR |