Part Details for IRF7307TRPBF by International Rectifier
Overview of IRF7307TRPBF by International Rectifier
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRF7307TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.3A I(D), 20V, 0.05OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1648 |
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$0.8250 / $2.2000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 1668 |
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RFQ |
Part Details for IRF7307TRPBF
IRF7307TRPBF CAD Models
IRF7307TRPBF Part Data Attributes
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IRF7307TRPBF
International Rectifier
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Datasheet
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IRF7307TRPBF
International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7307TRPBF
This table gives cross-reference parts and alternative options found for IRF7307TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7307TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7307 | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF7307TRPBF vs IRF7307 |
IRF7307TRPBF | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7307TRPBF vs IRF7307TRPBF |
IRF7307PBF | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7307TRPBF vs IRF7307PBF |
IRF7307PBF | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7307TRPBF vs IRF7307PBF |
IRF7307 | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | IRF7307TRPBF vs IRF7307 |