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Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8240
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Newark | Dual N/P Channel Mosfet, 30V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:4A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7309TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.4420 / $0.9240 | Buy Now |
DISTI #
IRF7309PBFCT-ND
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DigiKey | MOSFET N/P-CH 30V 4A/3A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
25284 In Stock |
|
$0.3135 / $0.8400 | Buy Now |
DISTI #
IRF7309TRPBF
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Avnet Americas | Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7309TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2926 / $0.3553 | Buy Now |
DISTI #
IRF7309TRPBF
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Avnet Americas | Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7309TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.2926 / $0.3344 | Buy Now |
DISTI #
942-IRF7309TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL N/PCh 30V 4.0A RoHS: Compliant | 3450 |
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$0.3130 / $0.8300 | Buy Now |
DISTI #
70017692
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RS | IRF7309TRPBF Dual N/P-channel MOSFET Transistor, 3 A, 4 A, 30 V, 8-Pin SOIC | Infineon IRF7309TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.7100 / $0.8900 | RFQ |
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Future Electronics | Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 56000Reel |
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$0.3100 / $0.3250 | Buy Now |
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Future Electronics | Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 1653Cut Tape/Mini-Reel |
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$0.5650 / $0.8350 | Buy Now |
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Future Electronics | Dual N/P-Channel 30 V 0.08/0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.3100 / $0.3250 | Buy Now |
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Rochester Electronics | IRF7309TRPBF - PLANAR <=40V RoHS: Compliant Status: Active Min Qty: 1 | 769 |
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$0.3109 / $0.3658 | Buy Now |
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IRF7309TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7309TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7309TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7309TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7309PBF | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | IRF7309TRPBF vs IRF7309PBF |
IRF7309PBF | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | Infineon Technologies AG | IRF7309TRPBF vs IRF7309PBF |
IRF7309 | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7309TRPBF vs IRF7309 |
IRF7309TRPBF | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7309TRPBF vs IRF7309TRPBF |