Datasheets
IRF7313PBF-1 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for IRF7313PBF-1 by Infineon Technologies AG

Overview of IRF7313PBF-1 by Infineon Technologies AG

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Part Details for IRF7313PBF-1

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IRF7313PBF-1 Part Data Attributes

IRF7313PBF-1 Infineon Technologies AG
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IRF7313PBF-1 Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
Moisture Sensitivity Level 1
Number of Elements 2
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IRF7313PBF-1

This table gives cross-reference parts and alternative options found for IRF7313PBF-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7313PBF-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7313TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET Infineon Technologies AG IRF7313PBF-1 vs IRF7313TRPBF-1
Part Number Description Manufacturer Compare
IRF7313 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7313PBF-1 vs IRF7313
FDS6982 Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN Fairchild Semiconductor Corporation IRF7313PBF-1 vs FDS6982
NTMD6N03R2 6A, 30V, 0.032ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 onsemi IRF7313PBF-1 vs NTMD6N03R2
IRF7313TRPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7313PBF-1 vs IRF7313TRPBF
IRF7313PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7313PBF-1 vs IRF7313PBF
IRF7313TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET Infineon Technologies AG IRF7313PBF-1 vs IRF7313TRPBF-1
FDS6982_NL Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN Fairchild Semiconductor Corporation IRF7313PBF-1 vs FDS6982_NL
IRF7313TR Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7313PBF-1 vs IRF7313TR

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