Datasheets
IRF7319TRPBF by:

Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7319TRPBF by Infineon Technologies AG

Results Overview of IRF7319TRPBF by Infineon Technologies AG

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IRF7319TRPBF Information

IRF7319TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7319TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 40M7945
Newark Dual N/P Channel Mosfet, 30V, Soic, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:6.5A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7319TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 121359
  • 1 $1.2600
  • 10 $0.8790
  • 25 $0.8140
  • 50 $0.7510
  • 100 $0.6860
  • 250 $0.6400
  • 500 $0.5930
  • 1,000 $0.5400
$0.5400 / $1.2600 Buy Now
DISTI # 99AK9907
Newark Mosfet, Comp N/P-Ch, 30V, 6.5A, Soic Rohs Compliant: Yes |Infineon IRF7319TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,000 $0.4590
  • 8,000 $0.4460
$0.4460 / $0.4590 Buy Now
DISTI # IRF7319TRPBF
Avnet Americas Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7319TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel 4000
  • 4,000 $0.3312
$0.3312 Buy Now
DISTI # 40M7945
Avnet Americas Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 40M7945) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack 5900 Partner Stock
  • 1 $1.2400
  • 10 $1.0100
  • 25 $0.9390
  • 50 $0.8630
  • 100 $0.7880
$0.7880 / $1.2400 Buy Now
DISTI # 70017695
RS IRF7319TRPBF Dual N/P-channel MOSFET Transistor, 4.9 A, 6.5 A, 30 V, 8-Pin SOIC | Infineon IRF7319TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk 0
  • 20 $0.9700
  • 200 $0.9200
  • 1,000 $0.8800
  • 2,000 $0.8200
$0.8200 / $0.9700 RFQ
Rochester Electronics IRF7319TRPBF - PLANAR <=40V RoHS: Compliant Status: Active Min Qty: 1 15005
  • 1 $0.4597
  • 25 $0.4505
  • 100 $0.4321
  • 500 $0.4137
  • 1,000 $0.3907
$0.3907 / $0.4597 Buy Now
Ameya Holding Limited Dual N/P-Channel 30 V 0.046/0.098 Ohm 33/34 nC HEXFET® Power Mosfet - SOIC-8 4000
RFQ
DISTI # C1S322000483646
Chip One Stop Trans MOSFET N/P-CH Si 30V 6.5A/4.9A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 34817
  • 5 $0.4340
  • 10 $0.4010
  • 50 $0.3950
  • 100 $0.3630
  • 200 $0.3520
  • 500 $0.3360
  • 1,000 $0.3230
  • 4,000 $0.3220
  • 16,000 $0.3170
$0.3170 / $0.4340 Buy Now
DISTI # SP001563414
EBV Elektronik Trans MOSFET NPCH 30V 65A49A 8Pin SOIC TR (Alt: SP001563414) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N/P-CH 30V 8SOIC 167000
  • 135 $0.3807
  • 285 $0.3562
  • 440 $0.3439
  • 630 $0.3193
  • 815 $0.3071
  • 1,020 $0.2948
$0.2948 / $0.3807 Buy Now

Part Details for IRF7319TRPBF

IRF7319TRPBF CAD Models

IRF7319TRPBF Part Data Attributes

IRF7319TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7319TRPBF Infineon Technologies AG Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 5 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 82 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

IRF7319TRPBF Related Parts

IRF7319TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7319TRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF7319TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF7319TRPBF from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the workspace and equipment are ESD-safe.

  • The maximum allowable power dissipation for the IRF7319TRPBF is 125W, but this can be affected by factors such as ambient temperature, heat sinking, and airflow.

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