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Transistors / Power Field-Effect Transistors / IRF7324PBF
Datasheets
IRF7324PBF by:

Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7324PBF by Infineon Technologies AG

Results Overview of IRF7324PBF by Infineon Technologies AG

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IRF7324PBF Information

IRF7324PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7324PBF

Part # Distributor Description Stock Price Buy
DISTI # SP001551268
EBV Elektronik Transistor MOSFET Array Dual PCH 20V 9A 8Pin SOIC Tube (Alt: SP001551268) RoHS: Compliant Min Qty: 3800 Package Multiple: 3800 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics HEXFET Power MOSFET(-20V, 0.018ohm) | MOSFET 2P-CH 20V 9A 8-SOIC 169200
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for IRF7324PBF

IRF7324PBF CAD Models

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IRF7324PBF Part Data Attributes

Parametric Data
IRF7324PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7324PBF Infineon Technologies AG Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 71 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7324PBF

This table gives cross-reference parts and alternative options found for IRF7324PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7324PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7324 International Rectifier Check for Price Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7324PBF vs IRF7324
Part Number Manufacturer Composite Price Description Compare
IRF7324TRPBF Infineon Technologies AG $0.6770 Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 IRF7324PBF vs IRF7324TRPBF
IRF7324TR International Rectifier Check for Price Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7324PBF vs IRF7324TR
IRF7324TRPBF-1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET IRF7324PBF vs IRF7324TRPBF-1
IRF7324 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7324PBF vs IRF7324
IRF7324PBF-1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET IRF7324PBF vs IRF7324PBF-1

IRF7324PBF Related Parts

IRF7324PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7324PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF7324PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF7324PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.

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