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Part Details for IRF7341TRPBFXTMA1 by Infineon Technologies AG
Results Overview of IRF7341TRPBFXTMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF7341TRPBFXTMA1 Information
IRF7341TRPBFXTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7341TRPBFXTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79AK7074
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Newark | Dual Mosfet, N-Ch, 55V, 4.7A, So-8 Rohs Compliant: Yes |Infineon IRF7341TRPBFXTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4595 |
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$0.5760 / $1.3900 | Buy Now |
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DISTI #
79AK7074
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Avnet Americas | MOSFET Array, Dual N Channel, 55 V, 4.7 A, 50 Milliohms, SOIC, 8 Pins - Product that comes on tape, but is not reeled (Alt: 79AK7074) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 288 Partner Stock |
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$0.6650 / $1.3500 | Buy Now |
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DISTI #
IRF7341TRPBFXTMA1
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Avnet Americas | MOSFET Array, Dual N Channel, 55 V, 4.7 A, 50 Milliohms, SOIC, 8 Pins - Tape and Reel (Alt: IRF7341TRPBFXTMA1) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3070 / $0.3356 | Buy Now |
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DISTI #
SP005876277
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EBV Elektronik | MOSFET Array, Dual N Channel, 55 V, 4.7 A, 50 Milliohms, SOIC, 8 Pins (Alt: SP005876277) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 9 Weeks, 0 Days | EBV - 336000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 4000 | 268000 |
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$0.3060 / $0.3306 | Buy Now |
Part Details for IRF7341TRPBFXTMA1
IRF7341TRPBFXTMA1 CAD Models
IRF7341TRPBFXTMA1 Part Data Attributes
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IRF7341TRPBFXTMA1
Infineon Technologies AG
Buy Now
Datasheet
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IRF7341TRPBFXTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 4.7 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 71 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 68 ns | |
| Turn-on Time-Max (ton) | 16.8 ns |