-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
19K8263
|
Newark | Dual P Channel Mosfet, -55V, 3.4A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:3.4A, Continuous Drain Current Id P Channel:3.4A Rohs Compliant: Yes |Infineon IRF7342TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2690 |
|
$0.5450 / $1.2400 | Buy Now |
DISTI #
IRF7342TRPBF
|
Avnet Americas | Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
IRF7342TRPBF
|
Avnet Americas | Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3713 / $0.3835 | Buy Now |
DISTI #
70017508
|
RS | MOSFET, Power, Dual P-Ch, VDSS -55V, RDS(ON) 0.105Ohm, ID -3.4A, SO-8,PD 2W, VGS+/-20V | Infineon IRF7342TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$0.9200 / $1.0800 | RFQ |
|
Rochester Electronics | IRF7342 - 3.4A, 55V, 0.105ohm, 2-Element, P-Channel MOSFET, MS-012AA RoHS: Compliant Status: Active Min Qty: 1 | 3500 |
|
$0.4329 / $0.5093 | Buy Now |
DISTI #
IRF7342TRPBF
|
TME | Transistor: P-MOSFET x2, unipolar, -55V, -3.4A, 2W, SO8 Min Qty: 1 | 13886 |
|
$0.3710 / $1.0580 | Buy Now |
|
ComSIT USA | Electronic Component RoHS: Compliant |
|
|
RFQ | |
|
Chip 1 Exchange | INSTOCK | 4726 |
|
RFQ | |
|
Chip-Germany GmbH | RoHS: Not Compliant | 10 |
|
RFQ | |
DISTI #
C1S322000484025
|
Chip1Stop | Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 3886 |
|
$0.3740 / $0.7200 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRF7342TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF7342TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 114 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 3.4 A | |
Drain-source On Resistance-Max | 0.105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 86 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 2 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 27 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 96 ns | |
Turn-on Time-Max (ton) | 37 ns |
This table gives cross-reference parts and alternative options found for IRF7342TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7342TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF7342PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7342TRPBF vs IRF7342PBF |
IRF7342TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | IRF7342TRPBF vs IRF7342TR |
AUIRF7342QTR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | IRF7342TRPBF vs AUIRF7342QTR |
IRF7342PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7342TRPBF vs IRF7342PBF |
IRF7342 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | IRF7342TRPBF vs IRF7342 |