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Part Details for IRF7342TRPBF by Infineon Technologies AG
Overview of IRF7342TRPBF by Infineon Technologies AG
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7342TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
19K8263
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Newark | Dual P Channel Mosfet, -55V, 3.4A, Channel Type:P Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:3.4A, Continuous Drain Current Id P Channel:3.4A Rohs Compliant: Yes |Infineon IRF7342TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1759 |
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$0.5580 / $1.2600 | Buy Now |
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DISTI #
IRF7342PBFCT-ND
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DigiKey | MOSFET 2P-CH 55V 3.4A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1098 In Stock |
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$0.4593 / $1.2200 | Buy Now |
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DISTI #
IRF7342TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4278 / $0.4890 | Buy Now |
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DISTI #
IRF7342TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7342TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4278 / $0.4890 | Buy Now |
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DISTI #
942-IRF7342TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL PCh -55V 3.4A RoHS: Compliant | 2899 |
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$0.5050 / $1.2200 | Buy Now |
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DISTI #
70017508
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RS | MOSFET, Power, Dual P-Ch, VDSS -55V, RDS(ON) 0.105Ohm, ID -3.4A, SO-8,PD 2W, VGS+/-20V | Infineon IRF7342TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.9000 / $1.0600 | RFQ |
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Future Electronics | Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 16000Reel |
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$0.3750 / $0.3950 | Buy Now |
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Future Electronics | Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.4500 / $0.4650 | Buy Now |
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DISTI #
69266214
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Verical | Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R Min Qty: 46 Package Multiple: 1 Date Code: 2238 | Americas - 3355 |
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$0.5175 / $0.6800 | Buy Now |
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Rochester Electronics | IRF7342 - 3.4A, 55V, 0.105ohm, 2-Element, P-Channel MOSFET, MS-012AA RoHS: Compliant Status: Active Min Qty: 1 | 3500 |
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$0.4546 / $0.5348 | Buy Now |
Part Details for IRF7342TRPBF
IRF7342TRPBF CAD Models
IRF7342TRPBF Part Data Attributes:
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IRF7342TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7342TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 114 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 86 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 96 ns | |
| Turn-on Time-Max (ton) | 37 ns |
Alternate Parts for IRF7342TRPBF
This table gives cross-reference parts and alternative options found for IRF7342TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7342TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7342TRPBF | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7342TRPBF vs IRF7342TRPBF |
| IRF7342 | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7342TRPBF vs IRF7342 |
| IRF7342QTRPBF | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | Infineon Technologies AG | IRF7342TRPBF vs IRF7342QTRPBF |
| IRF7342TR | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | IRF7342TRPBF vs IRF7342TR |
| AUIRF7342QTR | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7342TRPBF vs AUIRF7342QTR |
| IRF7342PBF | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7342TRPBF vs IRF7342PBF |