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Part Details for IRF7351TRPBF by Infineon Technologies AG
Overview of IRF7351TRPBF by Infineon Technologies AG
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- Number of Functional Equivalents:
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IRF7351TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9191
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Newark | Mosfet, N-Ch, 60V, 8A, 150Deg C, 2W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:8A, Continuous Drain Current Id P Channel:8A Rohs Compliant: Yes |Infineon IRF7351TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1709 |
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$0.6460 / $0.7050 | Buy Now |
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DISTI #
86AK5376
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Newark | Mosfet, N-Ch, 60V, 8A, Soic Rohs Compliant: Yes |Infineon IRF7351TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7080 / $0.7470 | Buy Now |
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DISTI #
IRF7351TRPBFCT-ND
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DigiKey | MOSFET 2N-CH 60V 8A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
33375 In Stock |
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$0.6810 / $1.6200 | Buy Now |
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DISTI #
IRF7351TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7351TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6356 / $0.7264 | Buy Now |
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DISTI #
942-IRF7351TRPBF
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Mouser Electronics | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual RoHS: Compliant | 28470 |
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$0.6940 / $1.6200 | Buy Now |
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DISTI #
E32:1076_00821601
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Arrow Electronics | Trans MOSFET N-CH 60V 8A 8-Pin SOIC T/R Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks | Europe - 2500 |
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$0.5623 / $0.7436 | Buy Now |
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DISTI #
V72:2272_13889731
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Arrow Electronics | Trans MOSFET N-CH 60V 8A 8-Pin SOIC T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2339 Container: Cut Strips | Americas - 42 |
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$0.6784 / $1.5840 | Buy Now |
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DISTI #
70019627
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RS | IRF7351TRPBF Dual N-channel MOSFET Transistor, 8 A, 60 V, 8-Pin SOIC | Infineon IRF7351TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$1.3400 / $1.6700 | RFQ |
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Future Electronics | Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 52000Reel |
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$0.7000 | Buy Now |
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Future Electronics | Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 8000Reel |
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$0.3150 | Buy Now |
Part Details for IRF7351TRPBF
IRF7351TRPBF CAD Models
IRF7351TRPBF Part Data Attributes
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IRF7351TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7351TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 325 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0178 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |