Datasheets
IRF7403PBF by:

Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7403PBF by Infineon Technologies AG

Overview of IRF7403PBF by Infineon Technologies AG

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Price & Stock for IRF7403PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7403PBF-ND
DigiKey MOSFET N-CH 30V 8.5A 8SO Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 9102671
element14 Asia-Pacific MOSFET, N, LOGIC, SO-8 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.9929
  • 10 $0.8164
  • 100 $0.6634
  • 500 $0.5649
  • 1,000 $0.4737
  • 5,000 $0.4442
$0.4442 / $0.9929 Buy Now
DISTI # 9102671
Farnell MOSFET, N, LOGIC, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 12 Weeks, 1 Days Container: Each 0
  • 1 $2.3615
  • 25 $1.8591
  • 100 $1.6581
  • 250 $1.5450
  • 1,000 $1.4320
$1.4320 / $2.3615 Buy Now
Win Source Electronics MOSFET N-CH 30V 8.5A 8-SOIC 5522
  • 40 $1.4130
  • 90 $1.1600
  • 135 $1.1240
  • 185 $1.0870
  • 240 $1.0510
  • 320 $0.9420
$0.9420 / $1.4130 Buy Now

Part Details for IRF7403PBF

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IRF7403PBF Part Data Attributes

IRF7403PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7403PBF Infineon Technologies AG Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.5 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7403PBF

This table gives cross-reference parts and alternative options found for IRF7403PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7403PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7403 Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7403PBF vs IRF7403
IRF7403TR Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRF7403PBF vs IRF7403TR
IRF7403TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7403PBF vs IRF7403TRPBF
IRF7403 Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7403PBF vs IRF7403
IRF7403TR Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRF7403PBF vs IRF7403TR
Part Number Description Manufacturer Compare
RF1K4909096 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor IRF7403PBF vs RF1K4909096
HAT1055R 5A, 60V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation IRF7403PBF vs HAT1055R
NDS9956 3.5A, 20V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Texas Instruments IRF7403PBF vs NDS9956
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation IRF7403PBF vs RF1K49090
FDS9926A_NL Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7403PBF vs FDS9926A_NL
FDS6961AZ Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7403PBF vs FDS6961AZ
PHN210T Power Field-Effect Transistor Nexperia IRF7403PBF vs PHN210T
IRF7101 Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7403PBF vs IRF7101
BSO211P Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG IRF7403PBF vs BSO211P
FW133 Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd IRF7403PBF vs FW133

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