Part Details for IRF741 by Motorola Semiconductor Products
Overview of IRF741 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF741
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 44 |
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$1.0800 / $1.8000 | Buy Now |
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Quest Components | 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 31 |
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$2.8000 / $4.2000 | Buy Now |
Part Details for IRF741
IRF741 CAD Models
IRF741 Part Data Attributes
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IRF741
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
IRF741
Motorola Semiconductor Products
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 125 ns | |
| Turn-on Time-Max (ton) | 50 ns |
Alternate Parts for IRF741
This table gives cross-reference parts and alternative options found for IRF741. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF741, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF741 | 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF741 vs IRF741 |
| IRF741 | 10A, 350V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF741 vs IRF741 |
| IRF742 | 8.3A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF741 vs IRF742 |
| IRF742 | Power Field-Effect Transistor, 8.3A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF741 vs IRF742 |
| IRF741-009 | Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF741 vs IRF741-009 |
| IRF741 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,10A I(D),TO-220AB | Intersil Corporation | IRF741 vs IRF741 |
| IRF743 | 8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF741 vs IRF743 |
| MTP10N40 | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF741 vs MTP10N40 |
| BUK457-400B | TRANSISTOR 11 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRF741 vs BUK457-400B |
| BUZ61A | Power Field-Effect Transistor, 11A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IRF741 vs BUZ61A |