Part Details for IRF7452TRPBF by Infineon Technologies AG
Overview of IRF7452TRPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7452TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7452TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 4.5A, 2.5W, SO8 Min Qty: 4000 | 0 |
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$0.4360 | RFQ |
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Chip1Cloud | MOSFET N-CH 100V 4.5A 8-SOIC / Trans MOSFET N-CH 100V 4.5A 8-Pin SOIC T/R | 2000 |
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RFQ | |
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DISTI #
2725906RL
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 4.5A, SOIC RoHS: Compliant Min Qty: 10 Container: Reel | 0 |
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$0.5324 / $0.9835 | Buy Now |
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DISTI #
2725906
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 4.5A, SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.5324 / $1.1832 | Buy Now |
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DISTI #
2725906
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Farnell | MOSFET, N-CH, 100V, 4.5A, SOIC RoHS: Compliant Min Qty: 1 Lead time: 53 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.8262 / $1.6072 | Buy Now |
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DISTI #
2725906RL
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Farnell | MOSFET, N-CH, 100V, 4.5A, SOIC RoHS: Compliant Min Qty: 10 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$0.8262 / $1.2443 | Buy Now |
Part Details for IRF7452TRPBF
IRF7452TRPBF CAD Models
IRF7452TRPBF Part Data Attributes:
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IRF7452TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7452TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7452TRPBF
This table gives cross-reference parts and alternative options found for IRF7452TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7452TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7452TR | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7452TRPBF vs IRF7452TR |
| IRF7452QPBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | IRF7452TRPBF vs IRF7452QPBF |
| IRF7452 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7452TRPBF vs IRF7452 |
| IRF7452TR | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7452TRPBF vs IRF7452TR |
| IRF7452 | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7452TRPBF vs IRF7452 |
| IRF7452TRPBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7452TRPBF vs IRF7452TRPBF |
| IRF7452PBF | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7452TRPBF vs IRF7452PBF |