IRF7493TRPBF
Description: Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

Overview of IRF7493TRPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF7493TRPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 13AC9202
Newark Mosfet, N-Ch, 80V, 9.3A, Soic, Transistor Polarity:N Channel, Continuous Drain Current Id:9.3A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0115Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRF7493TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2444
  • 1 $1.6600
  • 10 $1.3800
  • 25 $1.2800
  • 50 $1.1900
  • 100 $1.0800
  • 250 $0.9960
  • 500 $0.9100
  • 1,000 $0.7440
$0.7440 / $1.6600 Buy Now
DISTI # 86AK5382
Newark Mosfet, N-Ch, 80V, 9.3A, Soic Rohs Compliant: Yes |Infineon IRF7493TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,000 $0.6830
  • 8,000 $0.6670
  • 16,000 $0.6350
$0.6350 / $0.6830 Buy Now
DISTI # IRF7493PBFTR-ND
DigiKey MOSFET N-CH 80V 9.3A 8SO Min Qty: 4000 Container: Reel 8000
Tape & Reel
  • 4,000 $0.6731
  • 8,000 $0.6410
  • 12,000 $0.6114
$0.6114 / $0.6731 Buy Now
DISTI # IRF7493PBFCT-ND
DigiKey MOSFET N-CH 80V 9.3A 8SO Min Qty: 1 Container: Cut Tape 713
Cut Tape
  • 1 $1.6300
  • 10 $1.3310
  • 100 $1.0355
  • 500 $0.8777
  • 1,000 $0.7150
  • 2,000 $0.6731
$0.6731 / $1.6300 Buy Now
DISTI # IRF7493PBFDKR-ND
DigiKey MOSFET N-CH 80V 9.3A 8SO Min Qty: 1 Container: Digi-Reel 0
Digi-Reel®
  • 1 $1.6300
  • 10 $1.3310
  • 100 $1.0355
  • 500 $0.8777
  • 1,000 $0.7150
  • 2,000 $0.6731
$0.6731 / $1.6300 Buy Now
DISTI # IRF7493TRPBF
Avnet Americas Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7493TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 20000
  • 4,000 $0.5086
$0.5086 Buy Now
Rochester Electronics IRF7493 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 12000
  • 1 $0.7120
  • 25 $0.6978
  • 100 $0.6693
  • 500 $0.6408
  • 1,000 $0.6052
$0.6052 / $0.7120 Buy Now
DISTI # IRF7493TRPBF
TME Transistor: N-MOSFET, unipolar, 80V, 9.2A, 2.5W, SO8 Min Qty: 4000 0
  • 4,000 $0.3920
$0.3920 RFQ
DISTI # TMOSP11961
Rutronik N-CH 80V 9,2A 15mOhm SO8 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel Stock DE - 8000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 4,000 $0.4244
  • 8,000 $0.4001
  • 12,000 $0.3759
  • 20,000 $0.3395
  • 28,000 $0.3274
$0.3274 / $0.4244 Buy Now
DISTI # C1S322000485352
Chip1Stop Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 4000
  • 5 $0.6880
  • 10 $0.6510
  • 50 $0.6490
  • 100 $0.6080
  • 200 $0.5680
  • 500 $0.5660
  • 1,000 $0.5500
  • 4,000 $0.5210
$0.5210 / $0.6880 Buy Now
DISTI # SP001575326
EBV Elektronik Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R (Alt: SP001575326) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days EBV - 244000
Buy Now
New Advantage Corporation Single N-Channel 80 V 15 mOhm 53 nC HEXFET� Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 4000 28000
  • 4,000 $0.6786
  • 28,000 $0.6333
$0.6333 / $0.6786 Buy Now
Win Source Electronics MOSFET N-CH 80V 9.3A 8-SOIC / Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R 141980
  • 55 $0.9610
  • 130 $0.7890
  • 200 $0.7640
  • 275 $0.7400
  • 350 $0.7150
  • 470 $0.6410
$0.6410 / $0.9610 Buy Now

CAD Models for IRF7493TRPBF by Infineon Technologies AG
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Part Data Attributes for IRF7493TRPBF by Infineon Technologies AG

IRF7493TRPBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
180 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
Drain Current-Max (ID)
9.3 A
Drain-source On Resistance-Max
0.015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
74 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF7493TRPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
    VS

Alternate Parts for IRF7493TRPBF

This table gives cross-reference parts and alternative options found for IRF7493TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7493TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7493 Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7493TRPBF vs IRF7493
IRF7493PBF Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7493TRPBF vs IRF7493PBF
IRF7493 Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7493TRPBF vs IRF7493
Part Number Description Manufacturer Compare
IRF7493PBF Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7493TRPBF vs IRF7493PBF
IRF7493 Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7493TRPBF vs IRF7493
IRF7493 Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7493TRPBF vs IRF7493

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