Datasheets
IRF7494PBF by:

Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

Part Details for IRF7494PBF by International Rectifier

Overview of IRF7494PBF by International Rectifier

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Price & Stock for IRF7494PBF

Part # Distributor Description Stock Price Buy
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant Stock EU - 129
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF7494PBF

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IRF7494PBF Part Data Attributes

IRF7494PBF International Rectifier
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IRF7494PBF International Rectifier Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SOP-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 262 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7494PBF

This table gives cross-reference parts and alternative options found for IRF7494PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7494PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7494TRPBF Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7494PBF vs IRF7494TRPBF
IRF7494 Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7494PBF vs IRF7494
Part Number Description Manufacturer Compare
FDMC86260 Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, ROHS COMPLIANT, POWER 33, 8 PIN Fairchild Semiconductor Corporation IRF7494PBF vs FDMC86260
IRF7494 Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7494PBF vs IRF7494
IRF7494TRPBF Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7494PBF vs IRF7494TRPBF

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