Part Details for IRF7501PBF by International Rectifier
Overview of IRF7501PBF by International Rectifier
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Part Details for IRF7501PBF
IRF7501PBF CAD Models
IRF7501PBF Part Data Attributes
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IRF7501PBF
International Rectifier
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Datasheet
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IRF7501PBF
International Rectifier
Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, MICRO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.4 A | |
| Drain-source On Resistance-Max | 0.135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.39 W | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7501PBF
This table gives cross-reference parts and alternative options found for IRF7501PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7501PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| IRF7501PBF | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 | Infineon Technologies AG | IRF7501PBF vs IRF7501PBF |
| IRF7501TRPBF | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | IRF7501PBF vs IRF7501TRPBF |
| IRF7501 | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7501PBF vs IRF7501 |
| IRF7501TR | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7501PBF vs IRF7501TR |
| IRF7501TRPBF | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7501PBF vs IRF7501TRPBF |