Datasheets
IRF7501TRPBF by:

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Part Details for IRF7501TRPBF by Infineon Technologies AG

Overview of IRF7501TRPBF by Infineon Technologies AG

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Price & Stock for IRF7501TRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7501TRPBF
TME Transistor: N-MOSFET x2, unipolar, 20V, 2.4A, 1.2W, SO8 Min Qty: 4000 0
  • 4,000 $0.2180
$0.2180 RFQ
CHIPMALL.COM LIMITED The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. 372
  • 1 $0.3520
$0.3520 Buy Now

Part Details for IRF7501TRPBF

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IRF7501TRPBF Part Data Attributes

IRF7501TRPBF Infineon Technologies AG
Buy Now Datasheet
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IRF7501TRPBF Infineon Technologies AG Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks, 1 Day
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.4 A
Drain-source On Resistance-Max 0.135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 19 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7501TRPBF

This table gives cross-reference parts and alternative options found for IRF7501TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7501TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7501PBF Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 Infineon Technologies AG IRF7501TRPBF vs IRF7501PBF
IRF7501 Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501
IRF7501TR Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501TR
IRF7501TRPBF Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501TRPBF
IRF7501PBF Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501PBF
Part Number Description Manufacturer Compare
IRF7501TRPBF Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501TRPBF
IRF7501PBF Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501PBF
IRF7501TR Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501TR
IRF7501PBF Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 Infineon Technologies AG IRF7501TRPBF vs IRF7501PBF
IRF7501 Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7501TRPBF vs IRF7501

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