Part Details for IRF7501TRPBF by Infineon Technologies AG
Overview of IRF7501TRPBF by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRF7501TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7501TRPBF
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TME | Transistor: N-MOSFET x2, unipolar, 20V, 2.4A, 1.2W, SO8 Min Qty: 4000 | 0 |
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$0.2180 | RFQ |
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CHIPMALL.COM LIMITED | The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. | 372 |
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$0.3520 | Buy Now |
Part Details for IRF7501TRPBF
IRF7501TRPBF CAD Models
IRF7501TRPBF Part Data Attributes
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IRF7501TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRF7501TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, S-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 11 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.4 A | |
Drain-source On Resistance-Max | 0.135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 19 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7501TRPBF
This table gives cross-reference parts and alternative options found for IRF7501TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7501TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7501PBF | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 | Infineon Technologies AG | IRF7501TRPBF vs IRF7501PBF |
IRF7501 | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7501TRPBF vs IRF7501 |
IRF7501TR | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7501TRPBF vs IRF7501TR |
IRF7501TRPBF | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7501TRPBF vs IRF7501TRPBF |
IRF7501PBF | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 | International Rectifier | IRF7501TRPBF vs IRF7501PBF |