Part Details for IRF7807APBF by Infineon Technologies AG
Overview of IRF7807APBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF7807APBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
9102930
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element14 Asia-Pacific | MOSFET, N, SO-8 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.4638 / $1.0348 | Buy Now |
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DISTI #
9102930
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Farnell | MOSFET, N, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$0.4533 / $1.0128 | Buy Now |
Part Details for IRF7807APBF
IRF7807APBF CAD Models
IRF7807APBF Part Data Attributes
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IRF7807APBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF7807APBF
Infineon Technologies AG
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.3 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 66 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7807APBF
This table gives cross-reference parts and alternative options found for IRF7807APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7807APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FSS212 | Power Field-Effect Transistor, 8A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | IRF7807APBF vs FSS212 |
| RXH090N03TB | Power Field-Effect Transistor, 9A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ROHM Semiconductor | IRF7807APBF vs RXH090N03TB |
| IRF7807TRPBF | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Infineon Technologies AG | IRF7807APBF vs IRF7807TRPBF |
| IRF7807PBF | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7807APBF vs IRF7807PBF |
| SSF4414 | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SOP-8 | Suzhou Good-Ark Electronics Co Ltd | IRF7807APBF vs SSF4414 |