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Transistors / Power Field-Effect Transistors / IRF7832TRPBF
Datasheets
IRF7832TRPBF by:

Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8

Part Details for IRF7832TRPBF by Infineon Technologies AG

Overview of IRF7832TRPBF by Infineon Technologies AG

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Price & Stock for IRF7832TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 2468025
Farnell MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Cut Tape 9037
  • 1 $1.3268
  • 10 $0.9862
  • 100 $0.7030
  • 500 $0.5703
  • 1,000 $0.4874
  • 5,000 $0.4772
$0.4772 / $1.3268 Buy Now
DISTI # 2468025RL
Farnell MOSFET, N CH, 30V, 20A, SOIC-8 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel 9037
  • 100 $0.7030
  • 500 $0.5703
  • 1,000 $0.4874
  • 5,000 $0.4772
$0.4772 / $0.7030 Buy Now
DISTI # IRF7832TRPBF
Avnet Americas Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7832TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4016
  • 8,000 $0.3984
  • 16,000 $0.3952
  • 24,000 $0.3920
  • 32,000 $0.3888
$0.3888 / $0.4016 Buy Now
DISTI # IRF7832TRPBF
Avnet Americas Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7832TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4421
  • 8,000 $0.3951
  • 16,000 $0.3902
  • 24,000 $0.3855
  • 32,000 $0.3810
$0.3810 / $0.4421 Buy Now
DISTI # 70017726
RS MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 3.1 Milliohms, ID 20A, SO-8,PD 2.5W, VGS +/-20V | Infineon IRF7832TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $1.6900
  • 100 $1.6100
  • 500 $1.5300
  • 1,000 $1.4300
$1.4300 / $1.6900 RFQ
Rochester Electronics IRF7832PbF - N-Channel HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 2950
  • 1 $0.5333
  • 25 $0.5226
  • 100 $0.5013
  • 500 $0.4800
  • 1,000 $0.4533
$0.4533 / $0.5333 Buy Now
DISTI # IRF7832TRPBF
TME Transistor: N-MOSFET, unipolar, 30V, 20A, 2.5W, SO8 Min Qty: 1 678
  • 1 $1.1840
  • 10 $0.9780
  • 100 $0.7340
  • 500 $0.6040
  • 1,000 $0.5580
  • 2,000 $0.5570
$0.5570 / $1.1840 Buy Now
Ameya Holding Limited Single N-Channel 30V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8 1968
RFQ
Chip Stock   3175
RFQ
DISTI # C1S322000486467
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 7523
  • 5 $1.0200
  • 10 $0.8900
  • 50 $0.7780
  • 100 $0.6300
  • 200 $0.6190
  • 500 $0.5130
  • 1,000 $0.4280
  • 4,000 $0.3790
$0.3790 / $1.0200 Buy Now
CHIPMALL.COM LIMITED 30V 20A 2.5W 4m@10V,20A 2.32V@250uA 1 N-Channel SOIC-8 MOSFETs ROHS 3902
  • 1 $0.5244
  • 10 $0.4355
  • 30 $0.3897
  • 100 $0.3452
  • 500 $0.2844
  • 1,000 $0.2711
$0.2711 / $0.5244 Buy Now
DISTI # SP001570470
EBV Elektronik Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R (Alt: SP001570470) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 20A 2.5W 4m10V20A 2.32V250uA 1 N-channel SOIC-8 MOSFETs ROHS 37
  • 1 $0.6105
  • 10 $0.5058
  • 30 $0.4535
  • 100 $0.4012
  • 500 $0.3298
  • 1,000 $0.3140
$0.3140 / $0.6105 Buy Now
Win Source Electronics Trans MOSFET N-CH 30V 20A 8-Pin SOIC N T/R / MOSFET N-CH 30V 20A 8-SOIC 269864
  • 130 $0.3974
  • 270 $0.3718
  • 420 $0.3590
  • 600 $0.3334
  • 785 $0.3205
  • 975 $0.3077
$0.3077 / $0.3974 Buy Now

Part Details for IRF7832TRPBF

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IRF7832TRPBF Part Data Attributes

Parametric Data
IRF7832TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7832TRPBF Infineon Technologies AG Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 260 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 450 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 155 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.5 W
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7832TRPBF

This table gives cross-reference parts and alternative options found for IRF7832TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7832TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7832 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7832TRPBF vs IRF7832
Part Number Manufacturer Composite Price Description Compare
IRF7832 International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7832TRPBF vs IRF7832
IRF7832TR International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7832TRPBF vs IRF7832TR
IRF7862PBF International Rectifier Check for Price Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 IRF7832TRPBF vs IRF7862PBF
IRF7832TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7832TRPBF vs IRF7832TR
NTMFS4935NT1G onsemi Check for Price Single N-Channel Power MOSFET 30V, 93A, 3.2mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL IRF7832TRPBF vs NTMFS4935NT1G
IRF7832TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7832TRPBF vs IRF7832TRPBF

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