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Part Details for IRF8010PBF by Infineon Technologies AG
Overview of IRF8010PBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF8010PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2853
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Newark | Mosfet Transistor, N Channel, 80 A, 100 V, 15 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRF8010PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1158 |
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$0.9410 / $1.6200 | Buy Now |
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DISTI #
IRF8010PBF-ND
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DigiKey | MOSFET N-CH 100V 80A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube | Temporarily Out of Stock |
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$0.8805 / $2.1000 | Buy Now |
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DISTI #
IRF8010PBF
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Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF8010PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 50 |
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$0.7924 / $0.9686 | Buy Now |
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DISTI #
942-IRF8010PBF
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Mouser Electronics | MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS: Compliant | 198 |
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$0.9050 / $1.5000 | Buy Now |
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DISTI #
70017008
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 12 Milliohms, ID 80A, TO-220AB, PD 260W,-55C | Infineon IRF8010PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 27 |
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$1.0700 | Buy Now |
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Future Electronics | Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1000 Container: Tube | 0Tube |
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$0.8350 / $0.9000 | Buy Now |
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Future Electronics | Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.8350 / $1.0500 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 1087 |
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$1.3950 / $3.7200 | Buy Now |
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DISTI #
IRF8010PBF
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Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF8010PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 50 |
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$0.7924 / $0.9686 | Buy Now |
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DISTI #
IRF8010PBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 80A, 260W, TO220AB Min Qty: 1 | 0 |
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$1.0500 / $1.5800 | RFQ |
Part Details for IRF8010PBF
IRF8010PBF CAD Models
IRF8010PBF Part Data Attributes
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IRF8010PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8010PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 260 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8010PBF
This table gives cross-reference parts and alternative options found for IRF8010PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8010PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF8010HR | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF8010PBF vs IRF8010HR |
| IRF8010PBF | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF8010PBF vs IRF8010PBF |
| IRF8010 | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF8010PBF vs IRF8010 |