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Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF8010STRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 80A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3100 In Stock |
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$1.6534 / $2.5000 | Buy Now |
DISTI #
IRF8010STRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF8010STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 4800 |
|
$0.9794 / $1.1893 | Buy Now |
DISTI #
942-IRF8010STRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 80A 15mOhm 81nC RoHS: Compliant | 2726 |
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$1.0800 / $1.8400 | Buy Now |
DISTI #
70019655
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RS | MOSFET, 100V, 80A, 15 MOHM, 81 NC QG, D2-PAK | Infineon IRF8010STRLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$2.1700 / $2.7200 | RFQ |
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Future Electronics | Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 35200Reel |
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$1.0600 / $1.1100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 15 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.6650 / $0.7050 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 40 |
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$1.7063 / $2.7300 | Buy Now |
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Quest Components | 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET | 3060 |
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$1.1490 / $3.0640 | Buy Now |
DISTI #
IRF8010STRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF8010STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 4800 |
|
$0.9794 / $1.1893 | Buy Now |
DISTI #
IRF8010STRLPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 80A, 260W, D2PAK Min Qty: 800 | 0 |
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$0.8700 | RFQ |
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IRF8010STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8010STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 310 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 59 pF | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 260 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF8010STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8010STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF8010S | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF8010STRLPBF vs IRF8010S |
IRF8010STRRPBF | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF8010STRLPBF vs IRF8010STRRPBF |
IRF8010STRL | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF8010STRLPBF vs IRF8010STRL |
IRF8010STRLPBF | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF8010STRLPBF vs IRF8010STRLPBF |
IRF8010SPBF | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF8010STRLPBF vs IRF8010SPBF |