Part Details for IRF821 by International Rectifier
Overview of IRF821 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRF821
IRF821 CAD Models
IRF821 Part Data Attributes
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IRF821
International Rectifier
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Datasheet
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IRF821
International Rectifier
Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for IRF821
This table gives cross-reference parts and alternative options found for IRF821. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF821, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ74 | 2.4A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRF821 vs BUZ74 |
IRF821 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF821 vs IRF821 |
MTP2N45 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Semiconductor Technology Inc | IRF821 vs MTP2N45 |
IRF821 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF821 vs IRF821 |
MTP1N45 | Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF821 vs MTP1N45 |
IRF821-001 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF821 vs IRF821-001 |
IRF823 | Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF821 vs IRF823 |
IRF821-009 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF821 vs IRF821-009 |
IRF823 | Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF821 vs IRF823 |
IRF822 | 2.8A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF821 vs IRF822 |