Part Details for IRF8301MTRPBF by Infineon Technologies AG
Overview of IRF8301MTRPBF by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF8301MTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4758
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Newark | Mosfet, N-Ch, 30V, 192A, Directfet Mt-7, Transistor Polarity:N Channel, Continuous Drain Current Id:192A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0013Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Infineon IRF8301MTRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
IRF8301MTRPBFCT-ND
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DigiKey | MOSFET N-CH 30V 34A DIRECTFET Min Qty: 1 Lead time: 44 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
311 In Stock |
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$1.7814 / $2.6900 | Buy Now |
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Rochester Electronics | IRF8301 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 4825 |
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$1.1200 / $1.3200 | Buy Now |
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DISTI #
IRF8301MTRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 192A, 89W, DirectFET Min Qty: 4800 | 0 |
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$2.4000 | RFQ |
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Ameya Holding Limited | Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET® | 1784 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 30V 27A DIRECTFET MT | 7600 |
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RFQ | |
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DISTI #
2579997
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element14 Asia-Pacific | MOSFET, N CH, 30V, 192A, DIRECTFET MT RoHS: Compliant Min Qty: 1 Container: Cut Tape | 4154 |
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$1.2202 / $2.5660 | Buy Now |
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DISTI #
2579997RL
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element14 Asia-Pacific | MOSFET, N CH, 30V, 192A, DIRECTFET MT RoHS: Compliant Min Qty: 100 Container: Reel | 4154 |
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$1.2202 / $1.6565 | Buy Now |
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DISTI #
2579997
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Farnell | MOSFET, N CH, 30V, 192A, DIRECTFET MT RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 4154 |
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$1.1527 / $2.7499 | Buy Now |
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DISTI #
2579997RL
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Farnell | MOSFET, N CH, 30V, 192A, DIRECTFET MT RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 4154 |
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$1.1527 / $1.5947 | Buy Now |
Part Details for IRF8301MTRPBF
IRF8301MTRPBF CAD Models
IRF8301MTRPBF Part Data Attributes:
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IRF8301MTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8301MTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 34A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.0015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |