Part Details for IRF830ALPBF by Vishay Intertechnologies
Overview of IRF830ALPBF by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF830ALPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF830ALPBF
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Avnet Americas | MOSFET N-CHANNEL 500V - Tape and Reel (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.9047 / $0.9613 | Buy Now |
DISTI #
IRF830ALPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5A, Idm: 20A, 74W, I2PAK,TO262 Min Qty: 1 | 971 |
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$0.7700 / $1.1600 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
DISTI #
IRF830ALPBF
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EBV Elektronik | MOSFET N-CHANNEL 500V (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF830ALPBF
IRF830ALPBF CAD Models
IRF830ALPBF Part Data Attributes
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IRF830ALPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830ALPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-262AA | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF830ALPBF
This table gives cross-reference parts and alternative options found for IRF830ALPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830ALPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF830AL | International Rectifier | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | IRF830ALPBF vs IRF830AL |
IRF830ALPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | IRF830ALPBF vs IRF830ALPBF |