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Transistors / Power Field-Effect Transistors / IRF840ALPBF
Datasheets
IRF840ALPBF by:

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRF840ALPBF by Vishay Intertechnologies

Results Overview of IRF840ALPBF by Vishay Intertechnologies

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IRF840ALPBF Information

IRF840ALPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF840ALPBF

Part # Distributor Description Stock Price Buy
DISTI # 47Y0980
Newark Mosfet Transistor, N Channel, 8 A, 500 V, 850 Mohm, 10 V Rohs Compliant: Yes |Vishay IRF840ALPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 268
  • 1 $1.8800
  • 10 $1.6900
  • 25 $1.5000
  • 50 $1.3900
  • 100 $1.2800
$1.2800 / $1.8800 Buy Now
DISTI # IRF840ALPBF
Avnet Americas MOSFET N-CHANNEL 500V - Bulk (Alt: IRF840ALPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Bulk 0
  • 1,000 $1.2500
  • 2,000 $1.2300
  • 4,000 $1.2107
  • 6,000 $1.1905
  • 8,000 $1.1765
$1.1765 / $1.2500 Buy Now
DISTI # IRF840ALPBF
TME Transistor: N-MOSFET, unipolar, 500V, 5.1A, Idm: 32A, 125W Min Qty: 1 0
  • 1 $1.4600
  • 3 $1.3200
  • 10 $1.1600
  • 50 $1.0400
  • 250 $0.9800
$0.9800 / $1.4600 RFQ
ComSIT USA POWER MOSFET Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant Stock DE - 200
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Chip 1 Exchange INSTOCK 13000
RFQ
DISTI # IRF840ALPBF
EBV Elektronik MOSFET N-CHANNEL 500V (Alt: IRF840ALPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Wuhan P&S 500V,850m��,8A,N-Channel Power MOSFET Min Qty: 1 10000
  • 1 $9.7300
  • 100 $3.2500
  • 500 $3.0000
  • 1,000 $2.9200
$2.9200 / $9.7300 Buy Now

Part Details for IRF840ALPBF

IRF840ALPBF CAD Models

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IRF840ALPBF Part Data Attributes

Parametric Data
IRF840ALPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF840ALPBF Vishay Intertechnologies Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-262AA
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 510 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF840ALPBF

This table gives cross-reference parts and alternative options found for IRF840ALPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840ALPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF840ALPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 IRF840ALPBF vs IRF840ALPBF
IRF840AL International Rectifier Check for Price Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF840ALPBF vs IRF840AL

IRF840ALPBF Related Parts

IRF840ALPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF840ALPBF is -55°C to 175°C.

  • Yes, the IRF840ALPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum current rating for the IRF840ALPBF is 23A.

  • Yes, the IRF840ALPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The typical gate threshold voltage for the IRF840ALPBF is around 2-4V.

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