| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS841 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFS841 |
| IRFI840GLCPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840GLCPBF |
| IRFI840GPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840GPBF |
| STP9NB50FP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF840FI vs STP9NB50FP |
| IRFI840GLC | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840GLC |
| 2SK1805 | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs 2SK1805 |
| IRFI840G | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840G |
| IRFI840GLCPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840GLCPBF |
| IRFI840GLC | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840GLC |
| IRFI840G | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF840FI vs IRFI840G |
Part Details for IRF840FI by STMicroelectronics
Results Overview of IRF840FI by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF840FI Information
IRF840FI by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF840FI
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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Bristol Electronics | N Channel Enhancement Mode Power Mos Transistors | 21 |
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RFQ | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-220VAR | 116 |
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$1.0605 / $2.8280 | Buy Now |
US Tariff Estimator: IRF840FI by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
IRF840FI Part Data Attributes
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IRF840FI
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF840FI
STMicroelectronics
Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SFM | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | High Voltage, Fast Switching | |
| Avalanche Energy Rating (Eas) | 510 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 110 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 125 Ns | |
| Turn-on Time-Max (ton) | 93 Ns |
Alternate Parts for IRF840FI
This table gives cross-reference parts and alternative options found for IRF840FI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840FI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
IRF840FI Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF840FI is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF840FI can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for the device, which can be used to estimate the RθJC.
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The recommended gate drive voltage for the IRF840FI is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the device's switching performance, but it may also increase the power consumption and EMI emissions.
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Yes, the IRF840FI can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The datasheet provides information on the device's high-frequency performance, and it's recommended to consult with STMicroelectronics' application notes for specific guidance.
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To ensure the IRF840FI is properly biased for linear operation, it's essential to provide a stable gate-source voltage (VGS) and a suitable drain-source voltage (VDS). The datasheet provides information on the recommended biasing conditions, and it's recommended to consult with STMicroelectronics' application notes for specific guidance.