Part Details for IRF840FI by STMicroelectronics
Overview of IRF840FI by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF840FI
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 21 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 116 |
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$1.0605 / $2.8280 | Buy Now |
Part Details for IRF840FI
IRF840FI CAD Models
IRF840FI Part Data Attributes
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IRF840FI
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF840FI
STMicroelectronics
4.5A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH VOLTAGE, FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 510 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 110 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 40 W | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 125 ns | |
Turn-on Time-Max (ton) | 93 ns |
Alternate Parts for IRF840FI
This table gives cross-reference parts and alternative options found for IRF840FI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF840FI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFI840GLC | Power Field-Effect Transistor, 4.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 | International Rectifier | IRF840FI vs IRFI840GLC |
IRFI840G | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | IRF840FI vs IRFI840G |
IRFI840GLCPBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 | International Rectifier | IRF840FI vs IRFI840GLCPBF |
IRFI840GLC | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULLPAK-3 | Vishay Siliconix | IRF840FI vs IRFI840GLC |
IRFI840GLCPBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3 | Vishay Siliconix | IRF840FI vs IRFI840GLCPBF |
IRFI840G | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 | Vishay Siliconix | IRF840FI vs IRFI840G |
IRFI840GPBF | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Siliconix | IRF840FI vs IRFI840GPBF |
IRFI840GPBF | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 | International Rectifier | IRF840FI vs IRFI840GPBF |
2SK1805 | TRANSISTOR 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRF840FI vs 2SK1805 |
IRFS841 | Power Field-Effect Transistor, 4.6A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF840FI vs IRFS841 |