Part Details for IRF8788PBF by Infineon Technologies AG
Overview of IRF8788PBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRF8788PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF8788PBF-ND
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DigiKey | MOSFET N-CH 30V 24A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Chip1Cloud | MOSFET N-CH 30V 24A 8-SO | 3330 |
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RFQ | |
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DISTI #
1688582
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Farnell | MOSFET, N-CH, 30V, SO8 RoHS: Compliant Min Qty: 5 Lead time: 44 Weeks, 0 Days Container: Each | 0 |
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$0.6700 / $0.7451 | Buy Now |
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Win Source Electronics | MOSFET N-CH 30V 24A 8-SO | 39822 |
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$0.9510 / $1.4270 | Buy Now |
Part Details for IRF8788PBF
IRF8788PBF CAD Models
IRF8788PBF Part Data Attributes:
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IRF8788PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8788PBF
Infineon Technologies AG
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 190 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |