Part Details for IRF8910PBF by International Rectifier
Overview of IRF8910PBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF8910PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRF8910 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 90 |
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$0.3347 / $0.3938 | Buy Now |
Part Details for IRF8910PBF
IRF8910PBF CAD Models
IRF8910PBF Part Data Attributes
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IRF8910PBF
International Rectifier
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Datasheet
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IRF8910PBF
International Rectifier
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | LEAD FREE, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 19 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0134 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 82 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8910PBF
This table gives cross-reference parts and alternative options found for IRF8910PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8910PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF8910TRPBF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRF8910PBF vs IRF8910TRPBF |
| IRF8910PBF | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF8910PBF vs IRF8910PBF |
| IRF8910PBF-1 | Power Field-Effect Transistor, | Infineon Technologies AG | IRF8910PBF vs IRF8910PBF-1 |
| IRF8910TRPBF-1 | Power Field-Effect Transistor | Infineon Technologies AG | IRF8910PBF vs IRF8910TRPBF-1 |
| IRF8910 | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF8910PBF vs IRF8910 |
| IRF8910 | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF8910PBF vs IRF8910 |