Part Details for IRF9131 by International Rectifier
Overview of IRF9131 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF9131
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 76 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-204AA | 5 |
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$3.5550 / $7.1100 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-204AA | 2 |
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$12.8125 / $13.7277 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-204AA | 9 |
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$39.9000 / $42.0000 | Buy Now |
Part Details for IRF9131
IRF9131 CAD Models
IRF9131 Part Data Attributes
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IRF9131
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF9131
International Rectifier
Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, O-MBFM-P2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for IRF9131
This table gives cross-reference parts and alternative options found for IRF9131. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9131, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFM8P08 | Power Field-Effect Transistor, 8A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF9131 vs RFM8P08 |
JANTXV2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | IRF9131 vs JANTXV2N6804 |
JAN2N6804 | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, METAL CAN, TO-3, 2 PIN | Microsemi Corporation | IRF9131 vs JAN2N6804 |
2N6804 | 11A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF9131 vs 2N6804 |
IRF9132 | 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF9131 vs IRF9132 |
MTM12P08 | 12A, 80V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | IRF9131 vs MTM12P08 |
RFM6P10 | 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF9131 vs RFM6P10 |
IRF9130 | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | IRF9131 vs IRF9130 |
2N6804E3 | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN | Microsemi Corporation | IRF9131 vs 2N6804E3 |
IRF9133 | Power Field-Effect Transistor, 10A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | IRF9131 vs IRF9133 |