Datasheets
IRF9132 by:

Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF9132 by International Rectifier

Overview of IRF9132 by International Rectifier

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Price & Stock for IRF9132

Part # Distributor Description Stock Price Buy
Quest Components 10 A, 100 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA 6
  • 1 $15.0000
  • 2 $10.0000
  • 4 $7.5000
$7.5000 / $15.0000 Buy Now

Part Details for IRF9132

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IRF9132 Part Data Attributes

IRF9132 International Rectifier
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IRF9132 International Rectifier Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF9132

This table gives cross-reference parts and alternative options found for IRF9132. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9132, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9130 Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9132 vs IRF9130
MTM12P10 Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF9132 vs MTM12P10
MTM12P08 Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF9132 vs MTM12P08
MTM20P08 20A, 80V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF9132 vs MTM20P08
IRF9131 Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9132 vs IRF9131
IRF9133 10A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF9132 vs IRF9133
IRF9130 12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF9132 vs IRF9130
RFM6P10 6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF9132 vs RFM6P10
IRF9130-QR-BR1 Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors IRF9132 vs IRF9130-QR-BR1
IRF9130 11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited IRF9132 vs IRF9130

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