Part Details for IRF9530NLPBF by Infineon Technologies AG
Overview of IRF9530NLPBF by Infineon Technologies AG
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Part Details for IRF9530NLPBF
IRF9530NLPBF CAD Models
IRF9530NLPBF Part Data Attributes
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IRF9530NLPBF
Infineon Technologies AG
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Datasheet
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IRF9530NLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-05-27 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |