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Transistors / Power Field-Effect Transistors / IRF9530NPBF
Datasheets
IRF9530NPBF by:

Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF9530NPBF by Infineon Technologies AG

Results Overview of IRF9530NPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF9530NPBF Information

IRF9530NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9530NPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7429
Newark P Channel Mosfet, -100V, 14A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF9530NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2790
  • 1 $0.7700
  • 10 $0.5830
  • 100 $0.5000
  • 500 $0.4560
  • 1,000 $0.3950
  • 4,000 $0.3820
  • 10,000 $0.3640
$0.3640 / $0.7700 Buy Now
DISTI # 63J7429
Avnet Americas Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7429) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 376 Partner Stock
  • 1 $0.7700
  • 10 $0.5830
  • 100 $0.5000
  • 500 $0.4560
  • 1,000 $0.3950
$0.3950 / $0.7700 Buy Now
DISTI # IRF9530NPBF
Avnet Americas Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF9530NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 2,000 $0.2916
  • 2,100 $0.2880
  • 4,100 $0.2845
  • 10,000 $0.2811
  • 20,000 $0.2777
$0.2777 / $0.2916 Buy Now
Bristol Electronics   Min Qty: 7 20
  • 7 $0.7500
$0.7500 Buy Now
Rochester Electronics IRF9530 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 263
  • 1 $0.3889
  • 25 $0.3811
  • 100 $0.3656
  • 500 $0.3500
  • 1,000 $0.3306
$0.3306 / $0.3889 Buy Now
DISTI # IRF9530NPBF
TME Transistor: P-MOSFET, unipolar, -100V, -14A, 79W, TO220AB Min Qty: 1 137
  • 1 $0.6890
  • 10 $0.5320
  • 50 $0.4770
  • 100 $0.4550
  • 500 $0.4070
  • 1,000 $0.3870
  • 10,000 $0.3820
$0.3820 / $0.6890 Buy Now
DISTI # C1S322000487767
Chip1Stop Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 1925
  • 5 $0.2660
  • 10 $0.2650
  • 100 $0.2640
  • 500 $0.2610
$0.2610 / $0.2660 Buy Now
CHIPMALL.COM LIMITED 100V 14A 79W 0.2@10V,8.4A 2V 1 Piece P-Channel TO-220AB MOSFETs ROHS 10406
  • 1 $0.2263
  • 10 $0.2174
  • 100 $0.1962
  • 500 $0.1856
$0.1856 / $0.2263 Buy Now
DISTI # SP001570634
EBV Elektronik Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB (Alt: SP001570634) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 62000
Buy Now
LCSC 100V 14A 79W 0.210V8.4A 2V 1 Piece P-Channel TO-220AB MOSFETs ROHS 10680
  • 1 $0.3709
  • 10 $0.2964
  • 50 $0.2638
  • 100 $0.2235
  • 500 $0.2064
  • 1,000 $0.1956
$0.1956 / $0.3709 Buy Now
New Advantage Corporation Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 50000
  • 1,000 $0.4903
  • 50,000 $0.4537
$0.4537 / $0.4903 Buy Now
Win Source Electronics MOSFET P-CH 100V 14A TO-220AB / Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube 316737
  • 230 $0.2214
  • 485 $0.2072
  • 750 $0.2000
  • 1,080 $0.1857
  • 1,400 $0.1786
  • 1,750 $0.1715
$0.1715 / $0.2214 Buy Now

Part Details for IRF9530NPBF

IRF9530NPBF CAD Models

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IRF9530NPBF Part Data Attributes

Parametric Data
IRF9530NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF9530NPBF Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9530NPBF

This table gives cross-reference parts and alternative options found for IRF9530NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9530NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9530PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN IRF9530NPBF vs IRF9530PBF
Part Number Manufacturer Composite Price Description Compare
IRF9530 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF9530NPBF vs IRF9530
IRF9530PBF International Rectifier Check for Price Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF9530NPBF vs IRF9530PBF
IRF9530NPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF9530NPBF vs IRF9530NPBF
IRF9530N International Rectifier Check for Price Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF9530NPBF vs IRF9530N
IRF9530N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF9530NPBF vs IRF9530N
IRF9530NLPBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN IRF9530NPBF vs IRF9530NLPBF

IRF9530NPBF Related Parts

IRF9530NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9530NPBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.

  • The recommended gate drive voltage for the IRF9530NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF9530NPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.

  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.

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