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Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7429
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Newark | P Channel Mosfet, -100V, 14A, To-220Ab, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF9530NPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1147 |
|
$0.3640 / $0.9570 | Buy Now |
DISTI #
IRF9530NPBF-ND
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DigiKey | MOSFET P-CH 100V 14A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
34054 In Stock |
|
$0.3507 / $0.9300 | Buy Now |
DISTI #
IRF9530NPBF
|
Avnet Americas | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF9530NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.3150 / $0.3850 | Buy Now |
DISTI #
63J7429
|
Avnet Americas | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7429) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 350 Partner Stock |
|
$0.4260 / $0.9670 | Buy Now |
DISTI #
942-IRF9530NPBF
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Mouser Electronics | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC RoHS: Compliant | 55605 |
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$0.3500 / $0.9000 | Buy Now |
DISTI #
E02:0323_00010968
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Arrow Electronics | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2412 | Europe - 1330 |
|
$0.3207 / $0.6785 | Buy Now |
DISTI #
V79:2366_27167610
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Arrow Electronics | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Date Code: 2205 | Americas - 10 |
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$0.3233 / $0.7625 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 11800Tube |
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$0.3450 / $0.4100 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 7850Tube |
|
$0.3350 / $0.4050 | Buy Now |
DISTI #
79357122
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Verical | Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 68 Package Multiple: 1 | Americas - 1995 |
|
$0.3813 / $0.4613 | Buy Now |
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IRF9530NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9530NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 79 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |