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Transistors Power Field-Effect Transistors IRF9620PBF

Transistors
IRF9620PBF
Description: Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRF9620PBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Security and Surveillance Audio and Video Systems Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for IRF9620PBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   188
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 3.5A I(D), 200V, 1.5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 100
  • 1 $1.3500
  • 14 $0.8100
  • 63 $0.6300
$0.6300 / $1.3500 Buy Now

CAD Models for IRF9620PBF by International Rectifier
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Part Data Attributes for IRF9620PBF by International Rectifier
Parametric Data

IRF9620PBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
LEAD FREE PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3.5 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
14 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF9620PBF
    International Rectifier
    Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRF9620PBF

This table gives cross-reference parts and alternative options found for IRF9620PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9620PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF9620PBF Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF9620PBF vs IRF9620PBF
IRF9620 Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF9620PBF vs IRF9620
IRF9620 3.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF9620PBF vs IRF9620
IRF9620PBF Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF9620PBF vs IRF9620PBF
IRF9620 3.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF9620PBF vs IRF9620
IRF9620 Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF9620PBF vs IRF9620
Part Number Description Manufacturer Compare
IRF9620 Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF9620PBF vs IRF9620
IRF9620PBF Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF9620PBF vs IRF9620PBF
IRF9620 3.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF9620PBF vs IRF9620
IRF9620 3.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF9620PBF vs IRF9620
IRF9620 Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF9620PBF vs IRF9620
IRF9620PBF Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF9620PBF vs IRF9620PBF
IRF9620 Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRF9620PBF vs IRF9620
IRFZ46 Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF9620PBF vs IRFZ46

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