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Transistors / Power Field-Effect Transistors / IRF9Z34NPBF
Datasheets
IRF9Z34NPBF by:

Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF9Z34NPBF by Infineon Technologies AG

Results Overview of IRF9Z34NPBF by Infineon Technologies AG

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IRF9Z34NPBF Information

IRF9Z34NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF9Z34NPBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2866
Newark Mosfet, P, -55V, -17A, To-220, Transistor Polarity:P Channel, Continuous Drain Current Id:17A, Drain Source Voltage Vds:-55V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Dissipation Rohs Compliant: Yes |Infineon IRF9Z34NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 18552
  • 1 $1.0700
  • 10 $0.6520
  • 100 $0.5850
  • 500 $0.5000
  • 1,000 $0.4810
$0.4810 / $1.0700 Buy Now
DISTI # IRF9Z34NPBF
Avnet Americas Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF9Z34NPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 50 $0.3807
  • 60 $0.3788
  • 110 $0.3769
  • 250 $0.3749
  • 500 $0.2695
$0.2695 / $0.3807 Buy Now
DISTI # 70017018
RS MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.1Ohm, ID -19A, TO-220AB, PD 68W, VGS +/-20V | Infineon IRF9Z34NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $0.9500
  • 10 $0.9000
  • 50 $0.8500
  • 100 $0.8100
$0.8100 / $0.9500 RFQ
Rochester Electronics IRF9Z34 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 321
  • 1 $0.3807
  • 25 $0.3731
  • 100 $0.3579
  • 500 $0.3426
  • 1,000 $0.3236
$0.3236 / $0.3807 Buy Now
DISTI # IRF9Z34NPBF
TME Transistor: P-MOSFET, unipolar, -55V, -19A, 68W, TO220AB Min Qty: 1 0
  • 1 $0.7020
  • 10 $0.4370
  • 50 $0.4210
  • 100 $0.3580
  • 250 $0.3340
  • 500 $0.3090
  • 1,000 $0.2960
  • 1,250 $0.2950
$0.2950 / $0.7020 RFQ
DISTI # SMC-IRF9Z34NPBF
Sensible Micro Corporation Transistor, Mosfet P-Ch 55V 19A To-220Ab RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Tubes 108
RFQ
DISTI # SP001560182
EBV Elektronik Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-220AB (Alt: SP001560182) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 19A 68W 0.110V10A 2V 1 piece P-channel TO-220AB MOSFETs ROHS 870
  • 1 $0.3627
  • 10 $0.2800
  • 50 $0.2586
  • 100 $0.2127
  • 500 $0.1928
  • 1,000 $0.1821
$0.1821 / $0.3627 Buy Now
Win Source Electronics MOSFET P-CH 55V 19A TO-220AB 58001
  • 235 $0.2152
  • 500 $0.2014
  • 775 $0.1944
  • 1,110 $0.1805
  • 1,445 $0.1736
  • 1,800 $0.1667
$0.1667 / $0.2152 Buy Now

Part Details for IRF9Z34NPBF

IRF9Z34NPBF CAD Models

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IRF9Z34NPBF Part Data Attributes

Parametric Data
IRF9Z34NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF9Z34NPBF Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9Z34NPBF

This table gives cross-reference parts and alternative options found for IRF9Z34NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFZ24NPBF Infineon Technologies AG $0.2704 Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF9Z34NPBF vs IRFZ24NPBF
IRFR1205TRPBF Infineon Technologies AG $0.5866 Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRF9Z34NPBF vs IRFR1205TRPBF
NTD3055L104T4G onsemi $0.4822 Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL IRF9Z34NPBF vs NTD3055L104T4G
NTD18N06LT4G onsemi $0.8649 Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL IRF9Z34NPBF vs NTD18N06LT4G
IRF9Z34NSTRLPBF Infineon Technologies AG $0.6813 Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF9Z34NPBF vs IRF9Z34NSTRLPBF
IRFR024NTRLPBF Infineon Technologies AG $0.3069 Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 IRF9Z34NPBF vs IRFR024NTRLPBF
HUF75321D3ST onsemi $0.5490 N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, DPAK-3 / TO-252-3, 2500-REEL IRF9Z34NPBF vs HUF75321D3ST
FDB045AN08A0 onsemi $2.1572 N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ, D2PAK-3 / TO-263-2, 800-REEL IRF9Z34NPBF vs FDB045AN08A0

IRF9Z34NPBF Related Parts

IRF9Z34NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF9Z34NPBF is -55°C to 175°C.

  • Yes, the IRF9Z34NPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

  • The maximum current rating for the IRF9Z34NPBF is 110A.

  • Yes, the IRF9Z34NPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.

  • The IRF9Z34NPBF comes in a TO-220AB package.

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