Datasheets
IRFB13N50APBF by:

Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for IRFB13N50APBF by Vishay Siliconix

Overview of IRFB13N50APBF by Vishay Siliconix

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFB13N50APBF

Part # Distributor Description Stock Price Buy
DISTI # IRFB13N50APBF-ND
DigiKey MOSFET N-CH 500V 14A TO220AB Min Qty: 1 Lead time: 20 Weeks Container: Tube 1572
In Stock
  • 1 $3.3600
  • 50 $2.6660
  • 100 $2.2852
  • 500 $2.0313
  • 1,000 $1.7393
  • 2,000 $1.6378
  • 5,000 $1.5713
$1.5713 / $3.3600 Buy Now
Bristol Electronics   1685
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 500V, 0.45OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 1348
  • 1 $6.8760
  • 237 $3.7818
  • 530 $3.4380
$3.4380 / $6.8760 Buy Now

Part Details for IRFB13N50APBF

IRFB13N50APBF CAD Models

IRFB13N50APBF Part Data Attributes:

IRFB13N50APBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFB13N50APBF Vishay Siliconix Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 560 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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