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Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6827
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Newark | Mosfet Transistor, N Channel, 170 A, 75 V, 4.1 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFB3207ZPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 451 |
|
$1.5300 / $2.4700 | Buy Now |
DISTI #
IRFB3207ZPBF-ND
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DigiKey | MOSFET N-CH 75V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
10616 In Stock |
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$1.2717 / $2.9300 | Buy Now |
DISTI #
IRFB3207ZPBF
|
Avnet Americas | Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3207ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$1.1066 / $1.3525 | Buy Now |
DISTI #
942-IRFB3207ZPBF
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Mouser Electronics | MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg RoHS: Compliant | 5108 |
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$1.2200 / $2.0900 | Buy Now |
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Future Electronics | Single N-Channel 75 V 4.1 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.2000 / $1.3300 | Buy Now |
|
Future Electronics | Single N-Channel 75 V 4.1 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.2000 / $1.3300 | Buy Now |
|
Future Electronics | Single N-Channel 75 V 4.1 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0Tube |
|
$1.0900 / $1.1400 | Buy Now |
DISTI #
62419313
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Verical | Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 29 Package Multiple: 1 Date Code: 2210 | Americas - 2000 |
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$0.7788 / $1.1025 | Buy Now |
DISTI #
79006049
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Verical | Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2405 | Americas - 1896 |
|
$1.1212 / $1.7146 | Buy Now |
DISTI #
62529832
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Verical | Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 6 Package Multiple: 1 Date Code: 2222 | Americas - 786 |
|
$1.0512 / $1.3610 | Buy Now |
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IRFB3207ZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB3207ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 670 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |