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Part Details for IRFB4227PBF by Infineon Technologies AG
Overview of IRFB4227PBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFB4227PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
79AH3176
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Newark | Trench >=100V Rohs Compliant: Yes |Infineon IRFB4227PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 3209 |
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$2.2000 / $3.5800 | Buy Now |
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DISTI #
66K6432
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Newark | Mosfet, 200V, 65A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:65A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFB4227PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 11539 |
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$1.9800 / $3.1600 | Buy Now |
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DISTI #
448-IRFB4227PBF-ND
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DigiKey | MOSFET N-CH 200V 65A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
2759 In Stock |
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$1.5180 / $3.2500 | Buy Now |
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DISTI #
IRFB4227PBF
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Avnet Americas | Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4227PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 3209 |
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$1.4168 / $1.7204 | Buy Now |
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DISTI #
66K6432
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Avnet Americas | Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 66K6432) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1333 Partner Stock |
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$2.3000 / $3.2300 | Buy Now |
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DISTI #
942-IRFB4227PBF
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Mouser Electronics | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg RoHS: Compliant | 2796 |
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$1.4800 / $2.8700 | Buy Now |
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Future Electronics | Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 72450Tube |
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$1.4600 / $1.6100 | Buy Now |
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Future Electronics | Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 7244Tube |
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$1.4600 / $1.6600 | Buy Now |
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Quest Components | 65 A, 200 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 800 |
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$2.3895 / $4.7790 | Buy Now |
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Rochester Electronics | IRFB4227 - 65A, 200V, 0.024ohm, N-Chanel Power MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 5106 |
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$1.5100 / $1.7700 | Buy Now |
Part Details for IRFB4227PBF
IRFB4227PBF CAD Models
IRFB4227PBF Part Data Attributes
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IRFB4227PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB4227PBF
Infineon Technologies AG
Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 330 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB4227PBF
This table gives cross-reference parts and alternative options found for IRFB4227PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4227PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB4233PBF | Power Field-Effect Transistor, 56A I(D), 230V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB4227PBF vs IRFB4233PBF |