Datasheets
IRFB4228PBF by:

Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRFB4228PBF by Infineon Technologies AG

Results Overview of IRFB4228PBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy

IRFB4228PBF Information

IRFB4228PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFB4228PBF

Part # Distributor Description Stock Price Buy
DISTI # 83R9937
Newark Mosfet Transistor, N Channel, 83 A, 150 V, 0.012 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IRFB4228PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 791
  • 1 $3.1300
  • 10 $2.6200
  • 25 $2.4500
  • 50 $2.2900
  • 100 $2.1200
  • 250 $2.1000
  • 500 $2.0800
$2.0800 / $3.1300 Buy Now
DISTI # IRFB4228PBF
Avnet Americas Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4228PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.2342
  • 2,000 $1.2199
  • 4,000 $1.2037
  • 6,000 $1.1894
  • 8,000 $1.1733
$1.1733 / $1.2342 Buy Now
DISTI # 70018293
RS IRFB4228PBF N-channel MOSFET Transistor, 83 A, 150 V, 3-Pin TO-220AB | Infineon IRFB4228PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $4.1900
  • 5 $3.9900
  • 10 $3.7700
  • 20 $3.5800
$3.5800 / $4.1900 RFQ
Rochester Electronics IRFB4228 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 577
  • 1 $1.6900
  • 25 $1.6600
  • 100 $1.5900
  • 500 $1.5200
  • 1,000 $1.4400
$1.4400 / $1.6900 Buy Now
DISTI # IRFB4228PBF
TME Transistor: N-MOSFET, unipolar, 150V, 83A, 330W, TO220AB Min Qty: 1 65
  • 1 $3.1700
  • 10 $2.2900
  • 50 $2.1200
  • 100 $2.0500
  • 500 $1.9100
$1.9100 / $3.1700 Buy Now
DISTI # C1S322000844281
Chip One Stop Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 2935
  • 5 $1.3300
  • 10 $1.0700
  • 50 $0.9540
  • 100 $0.9220
$0.9220 / $1.3300 Buy Now
DISTI # SP001575554
EBV Elektronik Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB (Alt: SP001575554) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 150V 83A 12m10V33A 330W 3V TO-220AB MOSFETs ROHS 8
  • 1 $2.2692
$2.2692 Buy Now

Part Details for IRFB4228PBF

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IRFB4228PBF Part Data Attributes

IRFB4228PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB4228PBF Infineon Technologies AG Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 83 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Pulsed Drain Current-Max (IDM) 330 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

IRFB4228PBF Related Parts

IRFB4228PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFB4228PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRFB4228PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFB4228PBF can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent oscillations.

  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor, to prevent damage to the device.

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