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Transistors / Power Field-Effect Transistors / IRFB7730PBF
Datasheets
IRFB7730PBF by:

Power Field-Effect Transistor,

Part Details for IRFB7730PBF by Infineon Technologies AG

Results Overview of IRFB7730PBF by Infineon Technologies AG

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IRFB7730PBF Information

IRFB7730PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFB7730PBF

Part # Distributor Description Stock Price Buy
DISTI # 31Y2058
Newark Mosfet, N-Ch, 75V, 195A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:195A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Infineon IRFB7730PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1543
  • 1 $1.7900
  • 10 $1.6400
  • 100 $1.5200
  • 500 $1.5200
  • 1,000 $1.5200
$1.5200 / $1.7900 Buy Now
DISTI # 31Y2058
Avnet Americas Trans MOSFET N-CH 75V 246A 3-Pin TO-220AB Tube - Bulk (Alt: 31Y2058) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 559 Partner Stock
  • 1 $2.6300
  • 10 $2.4000
  • 25 $2.1600
  • 50 $2.0200
  • 100 $1.8900
$1.8900 / $2.6300 Buy Now
DISTI # IRFB7730PBF
Avnet Americas Trans MOSFET N-CH 75V 246A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7730PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.1125
  • 1,100 $1.0988
  • 2,100 $1.0854
  • 5,000 $1.0723
  • 10,000 $1.0595
$1.0595 / $1.1125 Buy Now
DISTI # IRFB7730PBF
Avnet Americas Trans MOSFET N-CH 75V 246A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7730PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.1125
  • 1,100 $1.0988
  • 2,100 $1.0854
  • 5,000 $1.0723
  • 10,000 $1.0595
$1.0595 / $1.1125 Buy Now
DISTI # 70418895
RS IRFB7730PBF N-channel MOSFET Transistor, 246 A, 75 V, 3-Pin TO-220AB | Infineon IRFB7730PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $3.0500
  • 25 $2.9000
  • 50 $2.7500
  • 100 $2.5900
$2.5900 / $3.0500 RFQ
Rochester Electronics IRFB7730 - 75V Single N-Channel StrongIRFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 146
  • 1 $1.4800
  • 25 $1.4500
  • 100 $1.3900
  • 500 $1.3300
  • 1,000 $1.2600
$1.2600 / $1.4800 Buy Now
DISTI # IRFB7730PBF
TME Transistor: N-MOSFET, unipolar, 75V, 246A, 375W, TO220AB Min Qty: 1 228
  • 1 $3.5300
  • 3 $3.1700
  • 10 $2.8000
  • 50 $2.5400
$2.5400 / $3.5300 Buy Now
DISTI # C1S322000489242
Chip1Stop MOSFET RoHS: Compliant Container: Tube 1042
  • 1 $0.8950
  • 10 $0.8930
  • 50 $0.8910
  • 100 $0.8790
  • 200 $0.8770
  • 500 $0.8750
  • 1,000 $0.8730
$0.8730 / $0.8950 Buy Now
DISTI # SP001556128
EBV Elektronik Trans MOSFET N-CH 75V 246A 3-Pin TO-220AB Tube (Alt: SP001556128) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 75V 246A 375W 2.2m10V100A 2.1V250uA 1 N-channel TO-220AB MOSFETs ROHS 7
  • 1 $1.9519
  • 10 $1.6884
  • 50 $1.5225
  • 100 $1.3535
  • 500 $1.2775
  • 1,000 $1.2450
$1.2450 / $1.9519 Buy Now

Part Details for IRFB7730PBF

IRFB7730PBF CAD Models

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IRFB7730PBF Part Data Attributes

Parametric Data
IRFB7730PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB7730PBF Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 898 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 195 A
Drain-source On Resistance-Max 0.0026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 690 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 984 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

IRFB7730PBF Related Parts

IRFB7730PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFB7730PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.

  • The recommended gate drive voltage for the IRFB7730PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFB7730PBF can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and the gate drive signals are synchronized to prevent uneven current sharing.

  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor, to prevent damage to the device.

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