Part Details for IRFB9N65APBF by International Rectifier
Overview of IRFB9N65APBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFB9N65APBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 5700 |
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$0.7920 / $2.4000 | Buy Now |
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Quest Components | 8.5 A, 650 V, 0.93 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 4560 |
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$0.8800 / $3.2000 | Buy Now |
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Quest Components | 8.5 A, 650 V, 0.93 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 26 |
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$1.9650 / $2.4563 | Buy Now |
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Quest Components | 8.5 A, 650 V, 0.93 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 20 |
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$2.5000 / $4.0000 | Buy Now |
Part Details for IRFB9N65APBF
IRFB9N65APBF CAD Models
IRFB9N65APBF Part Data Attributes
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IRFB9N65APBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFB9N65APBF
International Rectifier
Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 325 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 8.5 A | |
Drain-source On Resistance-Max | 0.93 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |