Part Details for IRFBC30 by International Rectifier
Overview of IRFBC30 by International Rectifier
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFBC30
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Bristol Electronics | Min Qty: 4 | 10 |
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$1.3125 | Buy Now |
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Bristol Electronics | 50 |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 170 |
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$0.6006 / $1.2870 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 8 |
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$1.4000 / $1.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 40 |
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$1.2390 / $2.0650 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 36 |
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$1.4580 / $3.8880 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220 | 560 |
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$0.8580 / $2.1450 | Buy Now |
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Chip 1 Exchange | INSTOCK | 1298 |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 128 |
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$2.5000 / $3.8500 | Buy Now |
Part Details for IRFBC30
IRFBC30 CAD Models
IRFBC30 Part Data Attributes:
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IRFBC30
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFBC30
International Rectifier
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 2.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 74 W | |
| Power Dissipation-Max (Abs) | 74 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFBC30
This table gives cross-reference parts and alternative options found for IRFBC30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFBC30 | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRFBC30 vs IRFBC30 |
| IRFBC30 | 3.6A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRFBC30 vs IRFBC30 |
| IRFBC30PBF | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRFBC30 vs IRFBC30PBF |
| BUK455-600B | TRANSISTOR 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFBC30 vs BUK455-600B |
| IRFBC30 | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies | IRFBC30 vs IRFBC30 |
| IRFBC30PBF | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRFBC30 vs IRFBC30PBF |